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  • Hayne PRB 46 9515 1992

    Rights statement: © 1992 The American Physical Society

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Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

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Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions. / Hayne, Manus; USHER, A ; HARRIS, J J et al.
In: Physical review B, Vol. 46, No. 15, 15.10.1992, p. 9515-9519.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Hayne M, USHER A, HARRIS JJ, FOXON CT. Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions. Physical review B. 1992 Oct 15;46(15):9515-9519. doi: 10.1103/PhysRevB.46.9515

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Hayne, Manus ; USHER, A ; HARRIS, J J et al. / Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions. In: Physical review B. 1992 ; Vol. 46, No. 15. pp. 9515-9519.

Bibtex

@article{3f24535fcdac4b7ea8745fb7ba55608a,
title = "Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions",
abstract = "Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.",
author = "Manus Hayne and A USHER and HARRIS, {J J} and FOXON, {C T}",
note = "{\textcopyright} 1992 The American Physical Society",
year = "1992",
month = oct,
day = "15",
doi = "10.1103/PhysRevB.46.9515",
language = "English",
volume = "46",
pages = "9515--9519",
journal = "Physical review B",
issn = "0163-1829",
publisher = "AMER PHYSICAL SOC",
number = "15",

}

RIS

TY - JOUR

T1 - Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions

AU - Hayne, Manus

AU - USHER, A

AU - HARRIS, J J

AU - FOXON, C T

N1 - © 1992 The American Physical Society

PY - 1992/10/15

Y1 - 1992/10/15

N2 - Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.

AB - Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.

U2 - 10.1103/PhysRevB.46.9515

DO - 10.1103/PhysRevB.46.9515

M3 - Journal article

VL - 46

SP - 9515

EP - 9519

JO - Physical review B

JF - Physical review B

SN - 0163-1829

IS - 15

ER -