Rights statement: © 1992 The American Physical Society
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions
AU - Hayne, Manus
AU - USHER, A
AU - HARRIS, J J
AU - FOXON, C T
N1 - © 1992 The American Physical Society
PY - 1992/10/15
Y1 - 1992/10/15
N2 - Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.
AB - Exchange enhancement of the Landau-level separation of up to 30% has been observed in three high mobility GaAs/Ga1-xAlxAs single heterojunctions. Analysis of the amplitude of Shubnikov-de Haas oscillations as a function of temperature and magnetic field has allowed measurement of this enhancement at filling factors as high as nu = 100.
U2 - 10.1103/PhysRevB.46.9515
DO - 10.1103/PhysRevB.46.9515
M3 - Journal article
VL - 46
SP - 9515
EP - 9519
JO - Physical review B
JF - Physical review B
SN - 0163-1829
IS - 15
ER -