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Excitation energy transfer rate from Langmuir Blodgett (LB) dye monolayers to silicon: Effect of aggregate formation

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Excitation energy transfer rate from Langmuir Blodgett (LB) dye monolayers to silicon: Effect of aggregate formation. / Danos, Lefteris; Markvart, Tomas.
In: Chemical Physics Letters, Vol. 490, No. 4-6, 26.04.2010, p. 194-199.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Danos, L & Markvart, T 2010, 'Excitation energy transfer rate from Langmuir Blodgett (LB) dye monolayers to silicon: Effect of aggregate formation', Chemical Physics Letters, vol. 490, no. 4-6, pp. 194-199. https://doi.org/10.1016/j.cplett.2010.03.045

APA

Danos, L., & Markvart, T. (2010). Excitation energy transfer rate from Langmuir Blodgett (LB) dye monolayers to silicon: Effect of aggregate formation. Chemical Physics Letters, 490(4-6), 194-199. https://doi.org/10.1016/j.cplett.2010.03.045

Vancouver

Danos L, Markvart T. Excitation energy transfer rate from Langmuir Blodgett (LB) dye monolayers to silicon: Effect of aggregate formation. Chemical Physics Letters. 2010 Apr 26;490(4-6):194-199. doi: 10.1016/j.cplett.2010.03.045

Author

Danos, Lefteris ; Markvart, Tomas. / Excitation energy transfer rate from Langmuir Blodgett (LB) dye monolayers to silicon: Effect of aggregate formation. In: Chemical Physics Letters. 2010 ; Vol. 490, No. 4-6. pp. 194-199.

Bibtex

@article{f62d697e34f64d7493d0a65789fd5ed9,
title = "Excitation energy transfer rate from Langmuir Blodgett (LB) dye monolayers to silicon: Effect of aggregate formation",
abstract = "Time-resolved emission spectra (TRES) and decay curves have been recorded from mixed LB oxacarbocyanine dye monolayers and stearic acid at different distances to the silicon surface. We observe interlayer energy transfer between monomers and dimers present in the monolayer competing directly with energy transfer to silicon at close distances. We resolve these competing processes by studying the TRES spectra and decompose them into their emission components. We found the energy transfer rate for the monomer to silicon to be double than that of the dimer at a distance of d similar to 5 nm to the silicon surface. The Forster radius for the energy transfer to silicon was estimated at 5.5 +/- 0.5 nm. (C) 2010 Elsevier B.V. All rights reserved.",
keywords = "SEMICONDUCTOR, RESOLVED FLUORESCENCE, INTERFACES, CRYSTALS, MODE, FILMS",
author = "Lefteris Danos and Tomas Markvart",
year = "2010",
month = apr,
day = "26",
doi = "10.1016/j.cplett.2010.03.045",
language = "English",
volume = "490",
pages = "194--199",
journal = "Chemical Physics Letters",
issn = "0009-2614",
publisher = "Elsevier",
number = "4-6",

}

RIS

TY - JOUR

T1 - Excitation energy transfer rate from Langmuir Blodgett (LB) dye monolayers to silicon: Effect of aggregate formation

AU - Danos, Lefteris

AU - Markvart, Tomas

PY - 2010/4/26

Y1 - 2010/4/26

N2 - Time-resolved emission spectra (TRES) and decay curves have been recorded from mixed LB oxacarbocyanine dye monolayers and stearic acid at different distances to the silicon surface. We observe interlayer energy transfer between monomers and dimers present in the monolayer competing directly with energy transfer to silicon at close distances. We resolve these competing processes by studying the TRES spectra and decompose them into their emission components. We found the energy transfer rate for the monomer to silicon to be double than that of the dimer at a distance of d similar to 5 nm to the silicon surface. The Forster radius for the energy transfer to silicon was estimated at 5.5 +/- 0.5 nm. (C) 2010 Elsevier B.V. All rights reserved.

AB - Time-resolved emission spectra (TRES) and decay curves have been recorded from mixed LB oxacarbocyanine dye monolayers and stearic acid at different distances to the silicon surface. We observe interlayer energy transfer between monomers and dimers present in the monolayer competing directly with energy transfer to silicon at close distances. We resolve these competing processes by studying the TRES spectra and decompose them into their emission components. We found the energy transfer rate for the monomer to silicon to be double than that of the dimer at a distance of d similar to 5 nm to the silicon surface. The Forster radius for the energy transfer to silicon was estimated at 5.5 +/- 0.5 nm. (C) 2010 Elsevier B.V. All rights reserved.

KW - SEMICONDUCTOR

KW - RESOLVED FLUORESCENCE

KW - INTERFACES

KW - CRYSTALS

KW - MODE

KW - FILMS

UR - http://www.scopus.com/inward/record.url?scp=77950862753&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2010.03.045

DO - 10.1016/j.cplett.2010.03.045

M3 - Journal article

VL - 490

SP - 194

EP - 199

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

IS - 4-6

ER -