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Experimental observation of the negatively charged exciton stales in high magnetic fields

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Experimental observation of the negatively charged exciton stales in high magnetic fields. / Vanhoucke, Tony; Hayne, M ; Moshchalkov, Victor V et al.
In: Nanotechnology, Vol. 11, No. 4, 12.2000, p. 281-285.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Vanhoucke, T, Hayne, M, Moshchalkov, VV & Henini, M 2000, 'Experimental observation of the negatively charged exciton stales in high magnetic fields', Nanotechnology, vol. 11, no. 4, pp. 281-285. https://doi.org/10.1088/0957-4484/11/4/317

APA

Vancouver

Vanhoucke T, Hayne M, Moshchalkov VV, Henini M. Experimental observation of the negatively charged exciton stales in high magnetic fields. Nanotechnology. 2000 Dec;11(4):281-285. doi: 10.1088/0957-4484/11/4/317

Author

Vanhoucke, Tony ; Hayne, M ; Moshchalkov, Victor V et al. / Experimental observation of the negatively charged exciton stales in high magnetic fields. In: Nanotechnology. 2000 ; Vol. 11, No. 4. pp. 281-285.

Bibtex

@article{339fbbddf89b4c2694a63eb7c885366f,
title = "Experimental observation of the negatively charged exciton stales in high magnetic fields",
abstract = "We have studied the high magnetic field (less than or equal to 50 T) dependence of the negatively charged exciton properties in GaAs/AlxGa1-xAs (x = 0.33) quantum wells using photoluminescence (PL) spectroscopy. Observation of all the optically allowed transitions of the charged exciton allows us to experimentally verify a revised energy-level diagram of spin-split singlet and triplet states. The PL data obtained on all samples are completely consistent with this diagram, leading us to conclude that the negatively charged exciton is a model three-particle system. The binding energy of the negatively charged exciton is measured between 23 and 50 T, and found to be constant for both singlet and triplet states. Our results are compared with recent theory.",
keywords = "GAAS QUANTUM-WELLS",
author = "Tony Vanhoucke and M Hayne and Moshchalkov, {Victor V} and Mohamed Henini",
year = "2000",
month = dec,
doi = "10.1088/0957-4484/11/4/317",
language = "English",
volume = "11",
pages = "281--285",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "4",

}

RIS

TY - JOUR

T1 - Experimental observation of the negatively charged exciton stales in high magnetic fields

AU - Vanhoucke, Tony

AU - Hayne, M

AU - Moshchalkov, Victor V

AU - Henini, Mohamed

PY - 2000/12

Y1 - 2000/12

N2 - We have studied the high magnetic field (less than or equal to 50 T) dependence of the negatively charged exciton properties in GaAs/AlxGa1-xAs (x = 0.33) quantum wells using photoluminescence (PL) spectroscopy. Observation of all the optically allowed transitions of the charged exciton allows us to experimentally verify a revised energy-level diagram of spin-split singlet and triplet states. The PL data obtained on all samples are completely consistent with this diagram, leading us to conclude that the negatively charged exciton is a model three-particle system. The binding energy of the negatively charged exciton is measured between 23 and 50 T, and found to be constant for both singlet and triplet states. Our results are compared with recent theory.

AB - We have studied the high magnetic field (less than or equal to 50 T) dependence of the negatively charged exciton properties in GaAs/AlxGa1-xAs (x = 0.33) quantum wells using photoluminescence (PL) spectroscopy. Observation of all the optically allowed transitions of the charged exciton allows us to experimentally verify a revised energy-level diagram of spin-split singlet and triplet states. The PL data obtained on all samples are completely consistent with this diagram, leading us to conclude that the negatively charged exciton is a model three-particle system. The binding energy of the negatively charged exciton is measured between 23 and 50 T, and found to be constant for both singlet and triplet states. Our results are compared with recent theory.

KW - GAAS QUANTUM-WELLS

U2 - 10.1088/0957-4484/11/4/317

DO - 10.1088/0957-4484/11/4/317

M3 - Journal article

VL - 11

SP - 281

EP - 285

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 4

ER -