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Extremely low excess noise InAlAs avalanche photodiodes

Research output: Contribution in Book/Report/ProceedingsConference contribution

Published

Publication date2007
Host publication2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings
Place of publicationNew York
PublisherIEEE
Pages81-83
Number of pages3
ISBN (Print)978-1-4244-0874-0
Original languageEnglish

Conference

Conference19th International Conference on Indium Phosphide and Related Materials
CityMatsue
Period14/05/0718/05/07

Conference

Conference19th International Conference on Indium Phosphide and Related Materials
CityMatsue
Period14/05/0718/05/07

Abstract

Excess noise factors < 4 at avalanche gain of 10 measured on a series of p(+)in(+) InAlAs diodes with avalanche regions ranging from 0.11 mu m to 2.53 mu m. Extremely low excess noise, corresponding to effective ionization coefficient ratios, k, of 0.15 < k < 0.25, showed the potential of InAlAs as multiplication region for avalanche photodiodes. Breakdown voltage obtained from multiplication characteristics of these diodes showed a linear dependence of breakdown voltage on the avalanche width. Using tunnelling parameters derived from current-voltage' measurements with the ionization coefficients and threshold energies derived from gain and excess noise measurements, our calculations showed that InAlAs avalanche photodiodes have sensitivities of similar to 28.8dBm assuming a rather high pre-amplifier noise of 15pAHz(-1/2).