We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


97% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Fabrication and characterization of Al nanomech...
View graph of relations

« Back

Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices

Research output: Contribution to journalJournal article


  • K. Harrabi
  • Y. A. Pashkin
  • O. V. Astafiev
  • S. Kafanov
  • T. F. Li
  • J. S. Tsai
<mark>Journal publication date</mark>07/2012
<mark>Journal</mark>Applied Physics A
Number of pages5
<mark>Original language</mark>English


We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiO (x) on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.