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Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices

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Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices. / Harrabi, K.; Pashkin, Y. A.; Astafiev, O. V. et al.
In: Applied Physics A, Vol. 108, No. 1, 07.2012, p. 7-11.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Harrabi K, Pashkin YA, Astafiev OV, Kafanov S, Li TF, Tsai JS. Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices. Applied Physics A. 2012 Jul;108(1):7-11. doi: 10.1007/s00339-012-6981-8

Author

Harrabi, K. ; Pashkin, Y. A. ; Astafiev, O. V. et al. / Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices. In: Applied Physics A. 2012 ; Vol. 108, No. 1. pp. 7-11.

Bibtex

@article{c9e2d9d1a7ef4d528c40692d0e2fed71,
title = "Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices",
abstract = "We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiO (x) on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.",
author = "K. Harrabi and Pashkin, {Y. A.} and Astafiev, {O. V.} and S. Kafanov and Li, {T. F.} and Tsai, {J. S.}",
year = "2012",
month = jul,
doi = "10.1007/s00339-012-6981-8",
language = "English",
volume = "108",
pages = "7--11",
journal = "Applied Physics A",
issn = "0947-8396",
publisher = "Springer Heidelberg",
number = "1",

}

RIS

TY - JOUR

T1 - Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices

AU - Harrabi, K.

AU - Pashkin, Y. A.

AU - Astafiev, O. V.

AU - Kafanov, S.

AU - Li, T. F.

AU - Tsai, J. S.

PY - 2012/7

Y1 - 2012/7

N2 - We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiO (x) on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.

AB - We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiO (x) on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.

U2 - 10.1007/s00339-012-6981-8

DO - 10.1007/s00339-012-6981-8

M3 - Journal article

VL - 108

SP - 7

EP - 11

JO - Applied Physics A

JF - Applied Physics A

SN - 0947-8396

IS - 1

ER -