Home > Research > Publications & Outputs > Fabrication and characterization of an InAs0.96...
View graph of relations

Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. . / Chakrabarti, P.; Krier, A.; Huang, X. L. et al.
In: IEEE Electron Device Letters, Vol. 25, No. 5, 05.05.2004, p. 283-285.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Chakrabarti, P, Krier, A, Huang, XL & Fenge, P 2004, 'Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .', IEEE Electron Device Letters, vol. 25, no. 5, pp. 283-285. https://doi.org/10.1109/LED.2004.826979

APA

Chakrabarti, P., Krier, A., Huang, X. L., & Fenge, P. (2004). Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. . IEEE Electron Device Letters, 25(5), 283-285. https://doi.org/10.1109/LED.2004.826979

Vancouver

Chakrabarti P, Krier A, Huang XL, Fenge P. Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. . IEEE Electron Device Letters. 2004 May 5;25(5):283-285. doi: 10.1109/LED.2004.826979

Author

Chakrabarti, P. ; Krier, A. ; Huang, X. L. et al. / Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. . In: IEEE Electron Device Letters. 2004 ; Vol. 25, No. 5. pp. 283-285.

Bibtex

@article{7586725c40c54744bfd807c5ddf06acf,
title = "Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .",
abstract = "In this letter, we report an InAsSb p(+)-n junction photodetector grown on InAs substrate by liquid phase epitaxy. Electrical and optical characterizations of the device have been carried out at room temperature for operation of the device in the mid-infrared region. The study revealed that the dark current of the photodetector under reverse bias is dominated by a trap-assisted tunnelling current component, which degrades the detectivity of the device. Further, by operating the device at a suitable low reverse bias it is possible to improve the room-temperature detectivity significantly as compared to its value at zero bias.",
author = "P. Chakrabarti and A. Krier and Huang, {X. L.} and P. Fenge",
year = "2004",
month = may,
day = "5",
doi = "10.1109/LED.2004.826979",
language = "English",
volume = "25",
pages = "283--285",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

AU - Chakrabarti, P.

AU - Krier, A.

AU - Huang, X. L.

AU - Fenge, P.

PY - 2004/5/5

Y1 - 2004/5/5

N2 - In this letter, we report an InAsSb p(+)-n junction photodetector grown on InAs substrate by liquid phase epitaxy. Electrical and optical characterizations of the device have been carried out at room temperature for operation of the device in the mid-infrared region. The study revealed that the dark current of the photodetector under reverse bias is dominated by a trap-assisted tunnelling current component, which degrades the detectivity of the device. Further, by operating the device at a suitable low reverse bias it is possible to improve the room-temperature detectivity significantly as compared to its value at zero bias.

AB - In this letter, we report an InAsSb p(+)-n junction photodetector grown on InAs substrate by liquid phase epitaxy. Electrical and optical characterizations of the device have been carried out at room temperature for operation of the device in the mid-infrared region. The study revealed that the dark current of the photodetector under reverse bias is dominated by a trap-assisted tunnelling current component, which degrades the detectivity of the device. Further, by operating the device at a suitable low reverse bias it is possible to improve the room-temperature detectivity significantly as compared to its value at zero bias.

U2 - 10.1109/LED.2004.826979

DO - 10.1109/LED.2004.826979

M3 - Journal article

VL - 25

SP - 283

EP - 285

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 5

ER -