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Fast prediction and optimization of yield in gallium arsenide large-signal MMICs

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>01/1998
<mark>Journal</mark>International Journal of RF and Microwave Computer-Aided Engineering
Issue number1
Number of pages9
Pages (from-to)68-76
<mark>Original language</mark>English


A study on the effects of the geometrical and physical parameters of the GaAs MMIC process on the yield of large-signal circuits is presented, Large-signal yield analysis as well as large-signal yield optimization are performed using a large-signal lumped-element MIESFET model related to MMIC process parameters, and suitable for implementation in commercial microwave CAD tools, The characterization of all the statistical variables of a large-signal circuit provides a better understanding of the yield behavior, In particular, the sensitivity of large-signal yield to MMIC process parameters is computed and the statistical behaviour of each parameter is presented by means of yield sensitivity histograms. (C) 1998 John Wiley & Sons, Inc.