12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Field-effect tunneling transistor based on vert...
View graph of relations

« Back

Field-effect tunneling transistor based on vertical graphene heterostructures

Research output: Contribution to journalJournal article

Published

  • L. Britnell
  • R. V. Gorbachev
  • R. Jalil
  • B. D. Belle
  • F. Schedin
  • A. Mishchenko
  • T. Georgiou
  • M. I. Katsnelson
  • L. Eaves
  • S. V. Morozov
  • N. M. R. Peres
  • J. Leist
  • A. K. Geim
  • K. S. Novoselov
  • L. A. Ponomarenko
Journal publication date24/02/2012
JournalScience
Journal number6071
Volume335
Number of pages4
Pages947-950
Original languageEnglish

Abstract

An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.