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GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

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GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes. / Smirnov, V. M.; Batty, P. J.; Jones, Robert et al.
In: physica status solidi (a), Vol. 204, No. 4, 04.2007, p. 1047-1050.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Smirnov, VM, Batty, PJ, Jones, R, Krier, A, Vasil'ev, VI, Gagis, GS & Kuchinskii, VI 2007, 'GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes', physica status solidi (a), vol. 204, no. 4, pp. 1047-1050. https://doi.org/10.1002/pssa.200674141

APA

Smirnov, V. M., Batty, P. J., Jones, R., Krier, A., Vasil'ev, V. I., Gagis, G. S., & Kuchinskii, V. I. (2007). GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes. physica status solidi (a), 204(4), 1047-1050. https://doi.org/10.1002/pssa.200674141

Vancouver

Smirnov VM, Batty PJ, Jones R, Krier A, Vasil'ev VI, Gagis GS et al. GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes. physica status solidi (a). 2007 Apr;204(4):1047-1050. doi: 10.1002/pssa.200674141

Author

Smirnov, V. M. ; Batty, P. J. ; Jones, Robert et al. / GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes. In: physica status solidi (a). 2007 ; Vol. 204, No. 4. pp. 1047-1050.

Bibtex

@article{1d912d3cd8da43db83cf4978c2987295,
title = "GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes",
abstract = "GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice-matched onto GaSb substrates were investigated. Homojunction p-i-n light-emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 mu m at room temperature was observed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
author = "Smirnov, {V. M.} and Batty, {P. J.} and Robert Jones and A. Krier and Vasil'ev, {V. I.} and Gagis, {G. S.} and Kuchinskii, {V. I.}",
year = "2007",
month = apr,
doi = "10.1002/pssa.200674141",
language = "English",
volume = "204",
pages = "1047--1050",
journal = "physica status solidi (a)",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "4",

}

RIS

TY - JOUR

T1 - GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

AU - Smirnov, V. M.

AU - Batty, P. J.

AU - Jones, Robert

AU - Krier, A.

AU - Vasil'ev, V. I.

AU - Gagis, G. S.

AU - Kuchinskii, V. I.

PY - 2007/4

Y1 - 2007/4

N2 - GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice-matched onto GaSb substrates were investigated. Homojunction p-i-n light-emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 mu m at room temperature was observed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - GaInAsPSb is a new narrow gap semiconductor material which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Photoluminescence emission spectra from GaInAsPSb grown by LPE and lattice-matched onto GaSb substrates were investigated. Homojunction p-i-n light-emitting diodes in this pentenary alloy were fabricated and electroluminescence peaking near 4.0 mu m at room temperature was observed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

U2 - 10.1002/pssa.200674141

DO - 10.1002/pssa.200674141

M3 - Journal article

VL - 204

SP - 1047

EP - 1050

JO - physica status solidi (a)

JF - physica status solidi (a)

SN - 0031-8965

IS - 4

ER -