Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers.
AU - Yin, M.
AU - Nash, G. R.
AU - Coomber, S. D.
AU - Buckle, L.
AU - Carrington, P. J.
AU - Krier, A.
AU - Andreev, A.
AU - Przeslak, S. J. B.
AU - de Valicourt, G.
AU - Smith, S. J.
AU - Emeny, M. T.
AU - Ashley, T.
N1 - Article number: 121106
PY - 2008/9/23
Y1 - 2008/9/23
N2 - Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. (C) 2008 American Institute of Physics.
AB - Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K. (C) 2008 American Institute of Physics.
U2 - 10.1063/1.2990224
DO - 10.1063/1.2990224
M3 - Journal article
VL - 93
SP - 121106
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 1077-3118
IS - 12
ER -