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GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer. / Ahmad Kamarudin, Mazliana; Hayne, Manus; Zhuang, Q. D. et al.
In: Journal of Physics D: Applied Physics, Vol. 43, No. 6, 26.01.2010, p. 065402.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ahmad Kamarudin, M, Hayne, M, Zhuang, QD, Kolosov, O, Nuytten, T, Moshchalkov, VV & Dinelli, F 2010, 'GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.', Journal of Physics D: Applied Physics, vol. 43, no. 6, pp. 065402. https://doi.org/10.1088/0022-3727/43/6/065402

APA

Ahmad Kamarudin, M., Hayne, M., Zhuang, Q. D., Kolosov, O., Nuytten, T., Moshchalkov, V. V., & Dinelli, F. (2010). GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer. Journal of Physics D: Applied Physics, 43(6), 065402. https://doi.org/10.1088/0022-3727/43/6/065402

Vancouver

Ahmad Kamarudin M, Hayne M, Zhuang QD, Kolosov O, Nuytten T, Moshchalkov VV et al. GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer. Journal of Physics D: Applied Physics. 2010 Jan 26;43(6):065402. doi: 10.1088/0022-3727/43/6/065402

Author

Ahmad Kamarudin, Mazliana ; Hayne, Manus ; Zhuang, Q. D. et al. / GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer. In: Journal of Physics D: Applied Physics. 2010 ; Vol. 43, No. 6. pp. 065402.

Bibtex

@article{705e9a7901d04133948c11e1e224880c,
title = "GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.",
abstract = "We compare the characteristics of GaSb quantum dots (QDs) grown by molecular beam epitaxy on GaAs at temperatures from 400°C to 490°C. The dot morphology, in terms of size, shape and density, as determined by atomic force microscopy on uncapped QDs, was found to be highly sensitive to the growth temperature. Photoluminescence spectra of capped QDs are also strongly dependent on growth temperature, but for samples with the highest dot density, where the QD luminescence would be expected to be the most intense, it is absent. We attribute this to dissolution of the dots by the capping layer. This explanation is confirmed by atomic force microscopy of a sample that is thinly capped at 490°C. Deposition of the capping layer at low temperature resolves this problem, resulting in strong QD photoluminescence from a sample with a high dot-density.",
author = "{Ahmad Kamarudin}, Mazliana and Manus Hayne and Zhuang, {Q. D.} and Oleg Kolosov and Thomas Nuytten and Moshchalkov, {V. V.} and F. Dinelli",
year = "2010",
month = jan,
day = "26",
doi = "10.1088/0022-3727/43/6/065402",
language = "English",
volume = "43",
pages = "065402",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "6",

}

RIS

TY - JOUR

T1 - GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.

AU - Ahmad Kamarudin, Mazliana

AU - Hayne, Manus

AU - Zhuang, Q. D.

AU - Kolosov, Oleg

AU - Nuytten, Thomas

AU - Moshchalkov, V. V.

AU - Dinelli, F.

PY - 2010/1/26

Y1 - 2010/1/26

N2 - We compare the characteristics of GaSb quantum dots (QDs) grown by molecular beam epitaxy on GaAs at temperatures from 400°C to 490°C. The dot morphology, in terms of size, shape and density, as determined by atomic force microscopy on uncapped QDs, was found to be highly sensitive to the growth temperature. Photoluminescence spectra of capped QDs are also strongly dependent on growth temperature, but for samples with the highest dot density, where the QD luminescence would be expected to be the most intense, it is absent. We attribute this to dissolution of the dots by the capping layer. This explanation is confirmed by atomic force microscopy of a sample that is thinly capped at 490°C. Deposition of the capping layer at low temperature resolves this problem, resulting in strong QD photoluminescence from a sample with a high dot-density.

AB - We compare the characteristics of GaSb quantum dots (QDs) grown by molecular beam epitaxy on GaAs at temperatures from 400°C to 490°C. The dot morphology, in terms of size, shape and density, as determined by atomic force microscopy on uncapped QDs, was found to be highly sensitive to the growth temperature. Photoluminescence spectra of capped QDs are also strongly dependent on growth temperature, but for samples with the highest dot density, where the QD luminescence would be expected to be the most intense, it is absent. We attribute this to dissolution of the dots by the capping layer. This explanation is confirmed by atomic force microscopy of a sample that is thinly capped at 490°C. Deposition of the capping layer at low temperature resolves this problem, resulting in strong QD photoluminescence from a sample with a high dot-density.

U2 - 10.1088/0022-3727/43/6/065402

DO - 10.1088/0022-3727/43/6/065402

M3 - Journal article

VL - 43

SP - 065402

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 6

ER -