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  • Hodgson JAP 119 044305 (2016)

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GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells. / Hodgson, Peter; Hayne, Manus; Robson, Alex et al.
In: Journal of Applied Physics, Vol. 119, No. 4, 044305, 28.01.2016.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hodgson, P, Hayne, M, Robson, A, Zhuang, Q & Danos, E 2016, 'GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells', Journal of Applied Physics, vol. 119, no. 4, 044305. https://doi.org/10.1063/1.4940880

APA

Hodgson, P., Hayne, M., Robson, A., Zhuang, Q., & Danos, E. (2016). GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells. Journal of Applied Physics, 119(4), Article 044305. https://doi.org/10.1063/1.4940880

Vancouver

Hodgson P, Hayne M, Robson A, Zhuang Q, Danos E. GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells. Journal of Applied Physics. 2016 Jan 28;119(4):044305. doi: 10.1063/1.4940880

Author

Hodgson, Peter ; Hayne, Manus ; Robson, Alex et al. / GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells. In: Journal of Applied Physics. 2016 ; Vol. 119, No. 4.

Bibtex

@article{b5a64dda26d84983a0d10dc57c1eea82,
title = "GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells",
abstract = "We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/AlxGa1-xAs quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, singleparticle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.",
author = "Peter Hodgson and Manus Hayne and Alex Robson and Qiandong Zhuang and Eleftherios Danos",
year = "2016",
month = jan,
day = "28",
doi = "10.1063/1.4940880",
language = "English",
volume = "119",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "4",

}

RIS

TY - JOUR

T1 - GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

AU - Hodgson, Peter

AU - Hayne, Manus

AU - Robson, Alex

AU - Zhuang, Qiandong

AU - Danos, Eleftherios

PY - 2016/1/28

Y1 - 2016/1/28

N2 - We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/AlxGa1-xAs quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, singleparticle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.

AB - We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/AlxGa1-xAs quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, singleparticle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.

U2 - 10.1063/1.4940880

DO - 10.1063/1.4940880

M3 - Journal article

VL - 119

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

M1 - 044305

ER -