Accepted author manuscript, 2.66 MB, PDF document
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Final published version
Research output: Contribution to Journal/Magazine › Letter › peer-review
Research output: Contribution to Journal/Magazine › Letter › peer-review
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TY - JOUR
T1 - Gate-defined quantum confinement in InSe-based Van der Waals heterostructures
AU - Hamer, Matthew
AU - Tóvári, Endre
AU - Mengjian, Zhu
AU - Thompson, Michael Dermot
AU - Mayorov, Alexander
AU - Prance, Jonathan Robert
AU - Lee, Yongjin
AU - Haley, Richard Peter
AU - Kudrynskyi, Zakhar
AU - Patane, A.
AU - Terry, Daniel
AU - Kovalyuk, Zakhar
AU - Ensslin, Klaus
AU - Kretinin, Andrey
AU - Geim, Andre
AU - Gorbachev, Roman
N1 - This document is the Accepted Manuscript version of a Published Work that appeared in final form in [Journal Title], copyright © American Chemical Society after peer review and technical editing by the publisher.To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.nanolett.8b01376
PY - 2018/5/15
Y1 - 2018/5/15
N2 - Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.
AB - Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.
U2 - 10.1021/acs.nanolett.8b01376
DO - 10.1021/acs.nanolett.8b01376
M3 - Letter
VL - 18
SP - 3950
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 6
ER -