Home > Research > Publications & Outputs > Generation of π modes in semiconductor vertical...
View graph of relations

Generation of π modes in semiconductor vertical-cavity surface-emitting lasers

Research output: Contribution to journalJournal article

Published
  • G. S. Sokolovskii
  • V. V. Dudelev
  • A. M. Monakhov
  • A. Yu. Savenko
  • S. A. Blokhin
  • A. G. Deryagin
  • Svetlana Zolotovskaya
  • A. G. Kuzmenkov
  • S. N. Losev
  • V. V. Luchinin
  • N. A. Maleev
  • E.U. Rafailov
  • W. Sibbett
  • V. I. Kuchinskii
Close
<mark>Journal publication date</mark>12/2009
<mark>Journal</mark>Technical Physics Letters
Issue number12
Volume35
Number of pages4
Pages (from-to)1133-1136
Publication statusPublished
Original languageEnglish

Abstract

We have theoretically and experimentally studied optical emission from the side faces of mesa structures for vertical-cavity surface-emitting lasers (VCSELs). The results of spatially resolved spectral measurements show that a new type of lasing modes is found in VCSELs with circular mesa structures, which corresponds to the π mode propagation along the mesa diameter with reflection from the sloped walls and the bottom Bragg mirror.