Rights statement: Authors, their institutions and third parties all have the same rights to reuse articles published in New Journal of Physics in accordance with the Creative Commons Attribution 3.0 Unported (CC-BY) license. This allows the articles to be shared, adapted and made commercial use of subject to appropriate attribution.
Final published version, 533 KB, PDF document
Available under license: CC BY
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Graphene, universality of the quantum Hall effect and redefinition of the SI system
AU - Janssen, T. J. B. M.
AU - Fletcher, N. E.
AU - Goebel, R.
AU - Williams, J. M.
AU - Tzalenchuk, A.
AU - Yakimova, R.
AU - Kubatkin, S.
AU - Lara-Avila, S.
AU - Falko, V. I.
N1 - Authors, their institutions and third parties all have the same rights to reuse articles published in New Journal of Physics in accordance with the Creative Commons Attribution 3.0 Unported (CC-BY) license. This allows the articles to be shared, adapted and made commercial use of subject to appropriate attribution.
PY - 2011/9/16
Y1 - 2011/9/16
N2 - The Systeme Internationale d'unites (SI) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships that link these constants to measurable quantities. Here we report the first direct comparison of the integer quantum Hall effect (QHE) in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference in the quantized resistance value within the relative standard uncertainty of our measurement of 8.6 x 10(-11), this being the most stringent test of the universality of the QHE in terms of material independence.
AB - The Systeme Internationale d'unites (SI) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships that link these constants to measurable quantities. Here we report the first direct comparison of the integer quantum Hall effect (QHE) in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference in the quantized resistance value within the relative standard uncertainty of our measurement of 8.6 x 10(-11), this being the most stringent test of the universality of the QHE in terms of material independence.
U2 - 10.1088/1367-2630/13/9/093026
DO - 10.1088/1367-2630/13/9/093026
M3 - Journal article
VL - 13
JO - New Journal of Physics
JF - New Journal of Physics
SN - 1367-2630
M1 - 093026
ER -