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Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

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Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. . / Huang, X. L.; Labadi, Z.; Hammiche, A. et al.
In: Journal of Physics D: Applied Physics, Vol. 35, No. 23, 07.12.2002, p. 3091-3095.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Huang, XL, Labadi, Z, Hammiche, A & Krier, A 2002, 'Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .', Journal of Physics D: Applied Physics, vol. 35, no. 23, pp. 3091-3095. https://doi.org/10.1088/0022-3727/35/23/309

APA

Huang, X. L., Labadi, Z., Hammiche, A., & Krier, A. (2002). Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. . Journal of Physics D: Applied Physics, 35(23), 3091-3095. https://doi.org/10.1088/0022-3727/35/23/309

Vancouver

Huang XL, Labadi Z, Hammiche A, Krier A. Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. . Journal of Physics D: Applied Physics. 2002 Dec 7;35(23):3091-3095. doi: 10.1088/0022-3727/35/23/309

Author

Huang, X. L. ; Labadi, Z. ; Hammiche, A. et al. / Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. . In: Journal of Physics D: Applied Physics. 2002 ; Vol. 35, No. 23. pp. 3091-3095.

Bibtex

@article{d78eb901db6545258ba490cdb909ebeb,
title = "Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .",
abstract = "Self-assembled PbSe quantum-dots (QD) have been grown on GaSb(100) substrates from the liquid phase. A Pb-rich melt at 517degreesC was used with 10degreesC supercooling and with a short (10 Ins) melt-substrate contact time. Atomic force microscopy has revealed that the PbSe QDs are 4-10 nm in height and 10-40 nm in diameter, with an area density of 1.7 x 10(10) cm(-2). The growth of QDs occurs in the Volmer-Weber mode and is a result of the difference in lattice structures between the PbSe and GaSb rather than the lattice constants.",
author = "Huang, {X. L.} and Z. Labadi and A. Hammiche and A. Krier",
year = "2002",
month = dec,
day = "7",
doi = "10.1088/0022-3727/35/23/309",
language = "English",
volume = "35",
pages = "3091--3095",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "23",

}

RIS

TY - JOUR

T1 - Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy. .

AU - Huang, X. L.

AU - Labadi, Z.

AU - Hammiche, A.

AU - Krier, A.

PY - 2002/12/7

Y1 - 2002/12/7

N2 - Self-assembled PbSe quantum-dots (QD) have been grown on GaSb(100) substrates from the liquid phase. A Pb-rich melt at 517degreesC was used with 10degreesC supercooling and with a short (10 Ins) melt-substrate contact time. Atomic force microscopy has revealed that the PbSe QDs are 4-10 nm in height and 10-40 nm in diameter, with an area density of 1.7 x 10(10) cm(-2). The growth of QDs occurs in the Volmer-Weber mode and is a result of the difference in lattice structures between the PbSe and GaSb rather than the lattice constants.

AB - Self-assembled PbSe quantum-dots (QD) have been grown on GaSb(100) substrates from the liquid phase. A Pb-rich melt at 517degreesC was used with 10degreesC supercooling and with a short (10 Ins) melt-substrate contact time. Atomic force microscopy has revealed that the PbSe QDs are 4-10 nm in height and 10-40 nm in diameter, with an area density of 1.7 x 10(10) cm(-2). The growth of QDs occurs in the Volmer-Weber mode and is a result of the difference in lattice structures between the PbSe and GaSb rather than the lattice constants.

U2 - 10.1088/0022-3727/35/23/309

DO - 10.1088/0022-3727/35/23/309

M3 - Journal article

VL - 35

SP - 3091

EP - 3095

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 23

ER -