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HEMT-HBT matrix amplifier

Research output: Contribution to journalJournal article

<mark>Journal publication date</mark>08/2000
<mark>Journal</mark>IEEE Transactions on Microwave Theory and Techniques
Issue number8
Number of pages5
Pages (from-to)1308-1312
<mark>Original language</mark>English


A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMT's) and heterojunction bipolar transistors (HBT's) is proposed in this paper. The amplifier includes HEMT's in the first tier and HBT's in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower de power consumption without remarkable gain and bandwidth Seduction, maintaining the advantage of using HEMT's in the first tier, A theory to demonstrate that the amplifier performance can be optimize if the HBT's in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented.