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High gain InAs electron-avalanche photodiodes for optical communication

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Publication date2010
Host publication2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)
Place of PublicationNew York
PublisherIEEE
Pages-
Number of pages4
ISBN (Print)978-1-4244-5920-9
<mark>Original language</mark>English

Conference

Conference22nd International Conference on Indium Phosphide and Related Materials
CityKagawa
Period31/05/104/06/10

Conference

Conference22nd International Conference on Indium Phosphide and Related Materials
CityKagawa
Period31/05/104/06/10

Abstract

We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming the electron only multiplication process within the field range covered. Excess noise measurements showed the excess noise factors of less than 2, providing further evidence of the ideal avalanche properties in InAs. Monte Carlo simulations performed provided good agreement to experimental results.