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High quality InAs grown by liquid phase epitaxy using gadolinium gettering

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High quality InAs grown by liquid phase epitaxy using gadolinium gettering. / Gao, H H ; Krier, A ; Sherstnev, V V .
In: Semiconductor Science and Technology, Vol. 14, No. 5, 05.1999, p. 441-445.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Gao, HH, Krier, A & Sherstnev, VV 1999, 'High quality InAs grown by liquid phase epitaxy using gadolinium gettering', Semiconductor Science and Technology, vol. 14, no. 5, pp. 441-445. https://doi.org/10.1088/0268-1242/14/5/012

APA

Gao, H. H., Krier, A., & Sherstnev, V. V. (1999). High quality InAs grown by liquid phase epitaxy using gadolinium gettering. Semiconductor Science and Technology, 14(5), 441-445. https://doi.org/10.1088/0268-1242/14/5/012

Vancouver

Gao HH, Krier A, Sherstnev VV. High quality InAs grown by liquid phase epitaxy using gadolinium gettering. Semiconductor Science and Technology. 1999 May;14(5):441-445. doi: 10.1088/0268-1242/14/5/012

Author

Gao, H H ; Krier, A ; Sherstnev, V V . / High quality InAs grown by liquid phase epitaxy using gadolinium gettering. In: Semiconductor Science and Technology. 1999 ; Vol. 14, No. 5. pp. 441-445.

Bibtex

@article{cd330b06e7844f79b7340ef6514a28c1,
title = "High quality InAs grown by liquid phase epitaxy using gadolinium gettering",
abstract = "In this paper, we report the growth of very pure InAs epitaxial layers of high quantum efficiency, by introducing the rare-earth element Gd into the liquid phase during LPE growth. We find that the carrier concentration of InAs layers can be effectively reduced to similar to 6 x 10(15) cm(-3). Also, the peak photoluminescence (PL) intensity of such layers can be considerably increased by between ten- and 100-fold compared with untreated material. We attribute this behaviour to the gettering of residual impurities and corresponding reduction of non-radiative recombination centres in the presence of Gd. Four intense sharp lines dominated the low temperature (4 K) photoluminescense spectra of Gd-treated InAs layers. The strongest two of these were found to originate from (a) bound excitons, and (b) donor-acceptor recombination, whereas the remaining two, (c) and (d), were associated with defect-related recombination. The linewidth (FWHM) of the exciton peak (a) was reduced to only 3.8 meV, which is narrower than for undoped epitaxial InAs grown by MBE or MOVPE.",
author = "Gao, {H H} and A Krier and Sherstnev, {V V}",
year = "1999",
month = may,
doi = "10.1088/0268-1242/14/5/012",
language = "English",
volume = "14",
pages = "441--445",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "5",

}

RIS

TY - JOUR

T1 - High quality InAs grown by liquid phase epitaxy using gadolinium gettering

AU - Gao, H H

AU - Krier, A

AU - Sherstnev, V V

PY - 1999/5

Y1 - 1999/5

N2 - In this paper, we report the growth of very pure InAs epitaxial layers of high quantum efficiency, by introducing the rare-earth element Gd into the liquid phase during LPE growth. We find that the carrier concentration of InAs layers can be effectively reduced to similar to 6 x 10(15) cm(-3). Also, the peak photoluminescence (PL) intensity of such layers can be considerably increased by between ten- and 100-fold compared with untreated material. We attribute this behaviour to the gettering of residual impurities and corresponding reduction of non-radiative recombination centres in the presence of Gd. Four intense sharp lines dominated the low temperature (4 K) photoluminescense spectra of Gd-treated InAs layers. The strongest two of these were found to originate from (a) bound excitons, and (b) donor-acceptor recombination, whereas the remaining two, (c) and (d), were associated with defect-related recombination. The linewidth (FWHM) of the exciton peak (a) was reduced to only 3.8 meV, which is narrower than for undoped epitaxial InAs grown by MBE or MOVPE.

AB - In this paper, we report the growth of very pure InAs epitaxial layers of high quantum efficiency, by introducing the rare-earth element Gd into the liquid phase during LPE growth. We find that the carrier concentration of InAs layers can be effectively reduced to similar to 6 x 10(15) cm(-3). Also, the peak photoluminescence (PL) intensity of such layers can be considerably increased by between ten- and 100-fold compared with untreated material. We attribute this behaviour to the gettering of residual impurities and corresponding reduction of non-radiative recombination centres in the presence of Gd. Four intense sharp lines dominated the low temperature (4 K) photoluminescense spectra of Gd-treated InAs layers. The strongest two of these were found to originate from (a) bound excitons, and (b) donor-acceptor recombination, whereas the remaining two, (c) and (d), were associated with defect-related recombination. The linewidth (FWHM) of the exciton peak (a) was reduced to only 3.8 meV, which is narrower than for undoped epitaxial InAs grown by MBE or MOVPE.

U2 - 10.1088/0268-1242/14/5/012

DO - 10.1088/0268-1242/14/5/012

M3 - Journal article

VL - 14

SP - 441

EP - 445

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

ER -