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High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>7/11/2011
<mark>Journal</mark>Optics Express
Issue number23
Number of pages9
Pages (from-to)23341-23349
<mark>Original language</mark>English


High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs. (C) 2011 Optical Society of America

Bibliographic note

© 2011 OSA This paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-23-23341 Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.