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High tunability and superluminescence in InAs mid-infrared light emitting diodes. .

Research output: Contribution to journalJournal article

Published

Journal publication date7/02/2002
JournalJournal of Physics D: Applied Physics
Journal number3
Volume35
Number of pages3
Pages196-198
Original languageEnglish

Abstract

We report on the observation of superluminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 mum. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence.