Home > Research > Publications & Outputs > High-pressure measurements of mid-infrared elec...

Research

Electronic data

Links

Text available via DOI:

View graph of relations

High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. . / Choulis, S. A.; Andreev, A.; Merrick, M. et al.
In: Applied Physics Letters, Vol. 82, No. 8, 24.02.2003, p. 1149-1151.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Choulis, SA, Andreev, A, Merrick, M, Adams, AR, Murdin, BN, Krier, A & Sherstnev, VV 2003, 'High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .', Applied Physics Letters, vol. 82, no. 8, pp. 1149-1151. https://doi.org/10.1063/1.1555276

APA

Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A., & Sherstnev, V. V. (2003). High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. . Applied Physics Letters, 82(8), 1149-1151. https://doi.org/10.1063/1.1555276

Vancouver

Choulis SA, Andreev A, Merrick M, Adams AR, Murdin BN, Krier A et al. High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. . Applied Physics Letters. 2003 Feb 24;82(8):1149-1151. doi: 10.1063/1.1555276

Author

Choulis, S. A. ; Andreev, A. ; Merrick, M. et al. / High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. . In: Applied Physics Letters. 2003 ; Vol. 82, No. 8. pp. 1149-1151.

Bibtex

@article{6632633aeb574360917c827affc99d00,
title = "High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .",
abstract = "The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 µm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs.",
author = "Choulis, {S. A.} and A. Andreev and M. Merrick and Adams, {A. R.} and Murdin, {B. N.} and A. Krier and Sherstnev, {V. V.}",
note = "Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (8), 2003 and may be found at http://link.aip.org/link/?APPLAB/82/1149/1",
year = "2003",
month = feb,
day = "24",
doi = "10.1063/1.1555276",
language = "English",
volume = "82",
pages = "1149--1151",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "8",

}

RIS

TY - JOUR

T1 - High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

AU - Choulis, S. A.

AU - Andreev, A.

AU - Merrick, M.

AU - Adams, A. R.

AU - Murdin, B. N.

AU - Krier, A.

AU - Sherstnev, V. V.

N1 - Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (8), 2003 and may be found at http://link.aip.org/link/?APPLAB/82/1149/1

PY - 2003/2/24

Y1 - 2003/2/24

N2 - The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 µm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs.

AB - The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 µm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs.

U2 - 10.1063/1.1555276

DO - 10.1063/1.1555276

M3 - Journal article

VL - 82

SP - 1149

EP - 1151

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 8

ER -