Rights statement: C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. This article appeared in Applied Physics Letters, 106 (2), 2015 and may be found at http://dx.doi.org/10.1063/1.4906111
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| Article number | 022111 |
|---|---|
| <mark>Journal publication date</mark> | 12/01/2015 |
| <mark>Journal</mark> | Applied Physics Letters |
| Issue number | 2 |
| Volume | 106 |
| Number of pages | 4 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.