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  • H tailored surface conductivity

    Rights statement: C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. This article appeared in Applied Physics Letters, 106 (2), 2015 and may be found at http://dx.doi.org/10.1063/1.4906111

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H-tailored surface conductivity in narrow band gap In(AsN)

Research output: Contribution to journalJournal article

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  • A. V. Velichko
  • A. Patane
  • M. Capizzi
  • I. C. Sandall
  • D. Giubertoni
  • O. Makarovsky
  • A. Polimeni
  • A. Krier
  • Q. Zhuang
  • C. H. Tan
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Article number022111
<mark>Journal publication date</mark>12/01/2015
<mark>Journal</mark>Applied Physics Letters
Issue number2
Volume106
Number of pages4
Publication statusPublished
Original languageEnglish

Abstract

We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (similar to 100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of similar to 10(18) m(-2) and a high electron mobility (mu > 0.1 m(2)V(-1)s(-1) at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Bibliographic note

VC 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. This article appeared in Applied Physics Letters, 106 (2), 2015 and may be found at http://dx.doi.org/10.1063/1.4906111