Home > Research > Publications & Outputs > Hydrogenation of GaSb/GaAs quantum rings

Research

Associated organisational unit

Electronic data

Links

Text available via DOI:

Keywords

View graph of relations

Hydrogenation of GaSb/GaAs quantum rings

Research output: Contribution to Journal/Magazine › Journal article

Published

Standard

Hydrogenation of GaSb/GaAs quantum rings. / Hodgson, Peter; Hayne, Manus; Ahmad Kamarudin, Mazliana et al.
In: Applied Physics Letters, Vol. 105, 081907, 28.08.2014.

Research output: Contribution to Journal/Magazine › Journal article

Harvard

Hodgson, P, Hayne, M, Ahmad Kamarudin, M, Zhuang, Q, Birindelli, S & Capizzi, M 2014, 'Hydrogenation of GaSb/GaAs quantum rings', Applied Physics Letters, vol. 105, 081907. https://doi.org/10.1063/1.4894413

APA

Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S., & Capizzi, M. (2014). Hydrogenation of GaSb/GaAs quantum rings. Applied Physics Letters, 105, Article 081907. https://doi.org/10.1063/1.4894413

Vancouver

Hodgson P, Hayne M, Ahmad Kamarudin M, Zhuang Q, Birindelli S, Capizzi M. Hydrogenation of GaSb/GaAs quantum rings. Applied Physics Letters. 2014 Aug 28;105:081907. doi: 10.1063/1.4894413

Author

Hodgson, Peter ; Hayne, Manus ; Ahmad Kamarudin, Mazliana et al. / Hydrogenation of GaSb/GaAs quantum rings. In: Applied Physics Letters. 2014 ; Vol. 105.

Bibtex

@article{5ed919c6cbff4dc687dcfe279c81ef00,
title = "Hydrogenation of GaSb/GaAs quantum rings",
abstract = "We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2K to 400 K. Hydrogenation is found to suppress optically induced charge depletion (associated with the presence of carbon acceptors in this system). A redshift of the QD\QR emission energy of a few tens of meV is observed at temperatures 300 K, consistent with a reduction in average occupancy by 1 hole. These effects are accompanied by a reduction in PL intensity post-hydrogenation. We conclude that although hydrogenation may have neutralized the carbon acceptors, multiple hole occupancy of type-II GaSb/GaAs QD/QRs is very likely a precondition for intense emission, which would make extending the wavelength significantly beyond 1300 nm at room temperature difficult.",
keywords = "Quantum Rings, Hydrogenation, GaSb",
author = "Peter Hodgson and Manus Hayne and {Ahmad Kamarudin}, Mazliana and Qiandong Zhuang and Simone Birindelli and Mario Capizzi",
note = "{\textcopyright} 2014 AIP Publishing LLC ",
year = "2014",
month = aug,
day = "28",
doi = "10.1063/1.4894413",
language = "English",
volume = "105",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",

}

RIS

TY - JOUR

T1 - Hydrogenation of GaSb/GaAs quantum rings

AU - Hodgson, Peter

AU - Hayne, Manus

AU - Ahmad Kamarudin, Mazliana

AU - Zhuang, Qiandong

AU - Birindelli, Simone

AU - Capizzi, Mario

N1 - © 2014 AIP Publishing LLC

PY - 2014/8/28

Y1 - 2014/8/28

N2 - We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2K to 400 K. Hydrogenation is found to suppress optically induced charge depletion (associated with the presence of carbon acceptors in this system). A redshift of the QD\QR emission energy of a few tens of meV is observed at temperatures 300 K, consistent with a reduction in average occupancy by 1 hole. These effects are accompanied by a reduction in PL intensity post-hydrogenation. We conclude that although hydrogenation may have neutralized the carbon acceptors, multiple hole occupancy of type-II GaSb/GaAs QD/QRs is very likely a precondition for intense emission, which would make extending the wavelength significantly beyond 1300 nm at room temperature difficult.

AB - We present the results of photoluminescence measurements on hydrogenated type-II GaSb/GaAs quantum dot/ring (QD/QR) samples at temperatures ranging from 4.2K to 400 K. Hydrogenation is found to suppress optically induced charge depletion (associated with the presence of carbon acceptors in this system). A redshift of the QD\QR emission energy of a few tens of meV is observed at temperatures 300 K, consistent with a reduction in average occupancy by 1 hole. These effects are accompanied by a reduction in PL intensity post-hydrogenation. We conclude that although hydrogenation may have neutralized the carbon acceptors, multiple hole occupancy of type-II GaSb/GaAs QD/QRs is very likely a precondition for intense emission, which would make extending the wavelength significantly beyond 1300 nm at room temperature difficult.

KW - Quantum Rings

KW - Hydrogenation

KW - GaSb

U2 - 10.1063/1.4894413

DO - 10.1063/1.4894413

M3 - Journal article

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

M1 - 081907

ER -