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Imaging the elastic nanostructure of Ge islands by ultrasonic force microscopy

Research output: Contribution to journalJournal article

Published

  • Oleg Kolosov
  • Martin R. Castell
  • Chris D. Marsh
  • G. Andrew D. Briggs
  • T. I. Kamins
  • R. Stanley Williams
<mark>Journal publication date</mark>3/08/1998
<mark>Journal</mark>Physical review letters
Issue5
Volume81
Number of pages4
Pages1046-1049
<mark>Original language</mark>English

Abstract

The structure of nanometer-sized strained Ce islands epitaxially grown on a Si substrate was studied using ultrasonic force microscopy (UFM), which combines the sensitivity to elastic structure of acoustic microscopy with the nanoscale spatial resolution of atomic force microscopy. UFM not only images the local surface elasticity variations between the Ge dots and the substrate with a spatial resolution of about 5 nm, but is also capable of detecting the strain variation across the dot, via the modification of the local stiffness.