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Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

Research output: Contribution to journalJournal article

  • James E. Green
  • Wei Sun Loh
  • Andrew R. J. Marshall
  • Beng Koon Ng
  • Richard C. Tozer
  • John P. R. David
  • Stanislav I. Soloviev
  • Peter M. Sandvik
<mark>Journal publication date</mark>04/2012
<mark>Journal</mark>IEEE Transactions on Electron Devices
Issue number4
Number of pages7
Pages (from-to)1030-1036
Publication statusPublished
Original languageEnglish


Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 mu m, respectively. Pure injection conditions in the thicker device permit the measurement of pure-hole-initiated photomultiplication and an excess noise factor. Ionization coefficients for both carrier types have been extracted from these data using a local model. The use of the excess noise factor to infer the value of the less readily ionizing coefficient alpha from pure hole injection measurements is more robust than direct extraction from mixed injection measurements. This is because mixed injection introduces uncertainty in the generation profile. We report a significant reduction of the electron ionization coefficient a at low fields. The more readily ionizing hole coefficient beta remains very similar to prior work.