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Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. / Green, James E.; Loh, Wei Sun; Marshall, Andrew R. J. et al.
In: IEEE Transactions on Electron Devices, Vol. 59, No. 4, 04.2012, p. 1030-1036.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Green, JE, Loh, WS, Marshall, ARJ, Ng, BK, Tozer, RC, David, JPR, Soloviev, SI & Sandvik, PM 2012, 'Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement', IEEE Transactions on Electron Devices, vol. 59, no. 4, pp. 1030-1036. https://doi.org/10.1109/TED.2012.2185499

APA

Green, J. E., Loh, W. S., Marshall, A. R. J., Ng, B. K., Tozer, R. C., David, J. P. R., Soloviev, S. I., & Sandvik, P. M. (2012). Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices, 59(4), 1030-1036. https://doi.org/10.1109/TED.2012.2185499

Vancouver

Green JE, Loh WS, Marshall ARJ, Ng BK, Tozer RC, David JPR et al. Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices. 2012 Apr;59(4):1030-1036. doi: 10.1109/TED.2012.2185499

Author

Green, James E. ; Loh, Wei Sun ; Marshall, Andrew R. J. et al. / Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. In: IEEE Transactions on Electron Devices. 2012 ; Vol. 59, No. 4. pp. 1030-1036.

Bibtex

@article{8bd2142a80ca4c6b8e8c343b88b94d79,
title = "Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement",
abstract = "Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 mu m, respectively. Pure injection conditions in the thicker device permit the measurement of pure-hole-initiated photomultiplication and an excess noise factor. Ionization coefficients for both carrier types have been extracted from these data using a local model. The use of the excess noise factor to infer the value of the less readily ionizing coefficient alpha from pure hole injection measurements is more robust than direct extraction from mixed injection measurements. This is because mixed injection introduces uncertainty in the generation profile. We report a significant reduction of the electron ionization coefficient a at low fields. The more readily ionizing hole coefficient beta remains very similar to prior work.",
author = "Green, {James E.} and Loh, {Wei Sun} and Marshall, {Andrew R. J.} and Ng, {Beng Koon} and Tozer, {Richard C.} and David, {John P. R.} and Soloviev, {Stanislav I.} and Sandvik, {Peter M.}",
year = "2012",
month = apr,
doi = "10.1109/TED.2012.2185499",
language = "English",
volume = "59",
pages = "1030--1036",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

RIS

TY - JOUR

T1 - Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

AU - Green, James E.

AU - Loh, Wei Sun

AU - Marshall, Andrew R. J.

AU - Ng, Beng Koon

AU - Tozer, Richard C.

AU - David, John P. R.

AU - Soloviev, Stanislav I.

AU - Sandvik, Peter M.

PY - 2012/4

Y1 - 2012/4

N2 - Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 mu m, respectively. Pure injection conditions in the thicker device permit the measurement of pure-hole-initiated photomultiplication and an excess noise factor. Ionization coefficients for both carrier types have been extracted from these data using a local model. The use of the excess noise factor to infer the value of the less readily ionizing coefficient alpha from pure hole injection measurements is more robust than direct extraction from mixed injection measurements. This is because mixed injection introduces uncertainty in the generation profile. We report a significant reduction of the electron ionization coefficient a at low fields. The more readily ionizing hole coefficient beta remains very similar to prior work.

AB - Photomultiplication and excess noise measurements have been undertaken on two 4H-SiC avalanche photodiodes (APDs) using 244-nm light and 325-nm light. The structures are APDs with separate absorption and multiplication regions having multiplication regions of 2.74 and 0.58 mu m, respectively. Pure injection conditions in the thicker device permit the measurement of pure-hole-initiated photomultiplication and an excess noise factor. Ionization coefficients for both carrier types have been extracted from these data using a local model. The use of the excess noise factor to infer the value of the less readily ionizing coefficient alpha from pure hole injection measurements is more robust than direct extraction from mixed injection measurements. This is because mixed injection introduces uncertainty in the generation profile. We report a significant reduction of the electron ionization coefficient a at low fields. The more readily ionizing hole coefficient beta remains very similar to prior work.

U2 - 10.1109/TED.2012.2185499

DO - 10.1109/TED.2012.2185499

M3 - Journal article

VL - 59

SP - 1030

EP - 1036

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 4

ER -