Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
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TY - GEN
T1 - InAs/GaAs quantum dot formation studied by magneto-photoluminescence spectroscopy
AU - Maes, J.
AU - Henini, M.
AU - Hayne, M.
AU - Patane, A.
AU - Pulizzi, F.
AU - Eaves, L.
AU - Main, P. C.
AU - Moshchalkov, V. V.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - InAs/GaAs quantum dots (QDs) formation was studied by photoluminescence (PL) in magnetic fields up to 50 tesla. In the set of samples investigated, the amount of InAs deposited on [100] and [311]B oriented GaAs was varied from 1.4 to 1.9 monolayers in steps of 0.1 monolayer. On the [100] plane, the large PL linewidths reveal the presence of QDs for an InAs coverage of as little as 1.4 ML. However, up to 1.5 ML an asymmetrical PL-line is observed together with a large diamagnetic energy shift between 0 T and 50 T. In field, the different contributions to the PL-line shift differently, separating their centers of mass. This reveals that the PL- line consists of two peaks: a broad one, characteristic of QD luminescence and a narrow one that we attribute to the wetting layer (WL). The changeover to a symmetric PL, line and the sudden drop in diamagnetic shift at 1.6 ML indicate that the luminescence is dominated by the QDs from 1.6 ML on. In this regime, the charges are well confined inside the QDs. From this point, the decrease in localisation with further increase in InAs coverage leads to a slight increase in diamagnetic shift.
AB - InAs/GaAs quantum dots (QDs) formation was studied by photoluminescence (PL) in magnetic fields up to 50 tesla. In the set of samples investigated, the amount of InAs deposited on [100] and [311]B oriented GaAs was varied from 1.4 to 1.9 monolayers in steps of 0.1 monolayer. On the [100] plane, the large PL linewidths reveal the presence of QDs for an InAs coverage of as little as 1.4 ML. However, up to 1.5 ML an asymmetrical PL-line is observed together with a large diamagnetic energy shift between 0 T and 50 T. In field, the different contributions to the PL-line shift differently, separating their centers of mass. This reveals that the PL- line consists of two peaks: a broad one, characteristic of QD luminescence and a narrow one that we attribute to the wetting layer (WL). The changeover to a symmetric PL, line and the sudden drop in diamagnetic shift at 1.6 ML indicate that the luminescence is dominated by the QDs from 1.6 ML on. In this regime, the charges are well confined inside the QDs. From this point, the decrease in localisation with further increase in InAs coverage leads to a slight increase in diamagnetic shift.
U2 - 10.1109/MBE.2002.1037909
DO - 10.1109/MBE.2002.1037909
M3 - Conference contribution/Paper
AN - SCOPUS:84968542099
T3 - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
SP - 361
EP - 362
BT - MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Conference on Molecular Beam Epitaxy, MBE 2002
Y2 - 15 September 2002 through 20 September 2002
ER -