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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - InAsSb-based nBn photodetectors
T2 - lattice mismatched growth on GaAs and low-frequency noise performance
AU - Craig, Adam
AU - Thompson, Michael
AU - Tian, Z.-B.
AU - Krishna, S.
AU - Krier, Anthony
AU - Marshall, Andrew
N1 - Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/0268-1242/30/10/105011
PY - 2015/8/24
Y1 - 2015/8/24
N2 - An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focalplane arrays capable of operating under thermoelectric cooling.
AB - An InAsSb nBn detector structure was grown on both GaAs and native GaSb substrates. Temperature dependent dark current, spectral response, specific detectivity (D*) and noise spectral density measurements were then carried out. Shot-noise-limited D*figures of 1.2 10 Jones × 10 and 3.0 10 Jones × 10 were calculated (based upon the sum of dark current and background photocurrent) for the sample grown on GaAs and the sample grown on GaSb, respectively, at 200 K. Noise spectral density measurements revealed knee frequencies of between 124–337 Hz and ∼8 Hz, respectively. Significantly, these devices could support focalplane arrays capable of operating under thermoelectric cooling.
KW - nBn
KW - dark currents
KW - 1/f noise
KW - IMF
KW - specific detectivity
U2 - 10.1088/0268-1242/30/10/105011
DO - 10.1088/0268-1242/30/10/105011
M3 - Journal article
VL - 30
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 10
M1 - 105011
ER -