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InAsSbP quantum dots grown by liquid phase epitaxy

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InAsSbP quantum dots grown by liquid phase epitaxy. / Krier, A ; Labadi, Z ; Hammiche, A .
In: Journal of Physics D: Applied Physics, Vol. 32, No. 20, 21.10.1999, p. 2587-2589.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A, Labadi, Z & Hammiche, A 1999, 'InAsSbP quantum dots grown by liquid phase epitaxy', Journal of Physics D: Applied Physics, vol. 32, no. 20, pp. 2587-2589. https://doi.org/10.1088/0022-3727/32/20/301

APA

Krier, A., Labadi, Z., & Hammiche, A. (1999). InAsSbP quantum dots grown by liquid phase epitaxy. Journal of Physics D: Applied Physics, 32(20), 2587-2589. https://doi.org/10.1088/0022-3727/32/20/301

Vancouver

Krier A, Labadi Z, Hammiche A. InAsSbP quantum dots grown by liquid phase epitaxy. Journal of Physics D: Applied Physics. 1999 Oct 21;32(20):2587-2589. doi: 10.1088/0022-3727/32/20/301

Author

Krier, A ; Labadi, Z ; Hammiche, A . / InAsSbP quantum dots grown by liquid phase epitaxy. In: Journal of Physics D: Applied Physics. 1999 ; Vol. 32, No. 20. pp. 2587-2589.

Bibtex

@article{258a97ad7fec454f876abb1aaf4fba8b,
title = "InAsSbP quantum dots grown by liquid phase epitaxy",
abstract = "We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.",
author = "A Krier and Z Labadi and A Hammiche",
year = "1999",
month = oct,
day = "21",
doi = "10.1088/0022-3727/32/20/301",
language = "English",
volume = "32",
pages = "2587--2589",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "20",

}

RIS

TY - JOUR

T1 - InAsSbP quantum dots grown by liquid phase epitaxy

AU - Krier, A

AU - Labadi, Z

AU - Hammiche, A

PY - 1999/10/21

Y1 - 1999/10/21

N2 - We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.

AB - We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.

U2 - 10.1088/0022-3727/32/20/301

DO - 10.1088/0022-3727/32/20/301

M3 - Journal article

VL - 32

SP - 2587

EP - 2589

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 20

ER -