TY - JOUR

T1 - Influence of indium composition on the surface morphology of self-organized InxGa1−xAs quantum dots on GaAs substrates

AU - Li, H. X.

AU - Zhuang, Qiandong

AU - Wang, Z. G.

AU - Daniels-Race, T.

PY - 2000

Y1 - 2000

N2 - InxGa1−xAs self-organized quantum dots with x=1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. The areal density, distribution, and shapes have been found to be dependent on x. The dot shape changes from a round shape for x=1.0 to an elliptical shape for x⩽0.5. The major axis and minor axis of the elliptical InxGa1−xAs dots are along the [math10] and [110] directions, respectively. The ordering phenomenon is also discussed. It is suggested that the dot–dot interaction may play important roles in the self-organization process. © 2000 American Institute of Physics.

AB - InxGa1−xAs self-organized quantum dots with x=1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. The areal density, distribution, and shapes have been found to be dependent on x. The dot shape changes from a round shape for x=1.0 to an elliptical shape for x⩽0.5. The major axis and minor axis of the elliptical InxGa1−xAs dots are along the [math10] and [110] directions, respectively. The ordering phenomenon is also discussed. It is suggested that the dot–dot interaction may play important roles in the self-organization process. © 2000 American Institute of Physics.

U2 - 10.1063/1.371842

DO - 10.1063/1.371842

M3 - Journal article

VL - 87

SP - 188

EP - 191

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

ER -