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Influence of trigonal warping on interference effects in bilayer graphene

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Influence of trigonal warping on interference effects in bilayer graphene. / Kechedzhi, K.; Falko, Vladimir I.; McCann, E. et al.
In: Physical review letters, Vol. 98, No. 17, 176806, 27.04.2007.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kechedzhi, K, Falko, VI, McCann, E & Altshuler, BL 2007, 'Influence of trigonal warping on interference effects in bilayer graphene', Physical review letters, vol. 98, no. 17, 176806. https://doi.org/10.1103/PhysRevLett.98.176806

APA

Kechedzhi, K., Falko, V. I., McCann, E., & Altshuler, B. L. (2007). Influence of trigonal warping on interference effects in bilayer graphene. Physical review letters, 98(17), Article 176806. https://doi.org/10.1103/PhysRevLett.98.176806

Vancouver

Kechedzhi K, Falko VI, McCann E, Altshuler BL. Influence of trigonal warping on interference effects in bilayer graphene. Physical review letters. 2007 Apr 27;98(17):176806. doi: 10.1103/PhysRevLett.98.176806

Author

Kechedzhi, K. ; Falko, Vladimir I. ; McCann, E. et al. / Influence of trigonal warping on interference effects in bilayer graphene. In: Physical review letters. 2007 ; Vol. 98, No. 17.

Bibtex

@article{e09bfb1410104ceea4439ae3b301c7f2,
title = "Influence of trigonal warping on interference effects in bilayer graphene",
abstract = "Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.",
keywords = "FLUCTUATIONS, MAGNETORESISTANCE, ELECTRON-GAS, WELLS, LOW-TEMPERATURES, CONDUCTION, ANTILOCALIZATION, INVERSION-LAYERS, WEAK-LOCALIZATION, FILMS",
author = "K. Kechedzhi and Falko, {Vladimir I.} and E. McCann and Altshuler, {B. L.}",
note = "{\textcopyright} 2007 The American Physical Society",
year = "2007",
month = apr,
day = "27",
doi = "10.1103/PhysRevLett.98.176806",
language = "English",
volume = "98",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "17",

}

RIS

TY - JOUR

T1 - Influence of trigonal warping on interference effects in bilayer graphene

AU - Kechedzhi, K.

AU - Falko, Vladimir I.

AU - McCann, E.

AU - Altshuler, B. L.

N1 - © 2007 The American Physical Society

PY - 2007/4/27

Y1 - 2007/4/27

N2 - Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.

AB - Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.

KW - FLUCTUATIONS

KW - MAGNETORESISTANCE

KW - ELECTRON-GAS

KW - WELLS

KW - LOW-TEMPERATURES

KW - CONDUCTION

KW - ANTILOCALIZATION

KW - INVERSION-LAYERS

KW - WEAK-LOCALIZATION

KW - FILMS

U2 - 10.1103/PhysRevLett.98.176806

DO - 10.1103/PhysRevLett.98.176806

M3 - Journal article

VL - 98

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

IS - 17

M1 - 176806

ER -