We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


97% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Influence of trigonal warping on interference e...
View graph of relations

« Back

Influence of trigonal warping on interference effects in bilayer graphene

Research output: Contribution to journalJournal article


Article number176806
<mark>Journal publication date</mark>27/04/2007
<mark>Journal</mark>Physical review letters
Number of pages4
<mark>Original language</mark>English


Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.

Bibliographic note

© 2007 The American Physical Society