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    Rights statement: Fernando Jiménez Urbanos, Andrés Black, Ramón Bernardo-Gavito, Manuel R. Osorio, Santiago Casado, Daniel Granados, "Innovative patterning method for modifying few-layer MoS2 device geometries", Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540G (31 August 2017); doi: 10.1117/12.2272702; http://dx.doi.org/10.1117/12.2272702 Copyright 2017 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, or modification of the contents of the publication are prohibited.

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Innovative patterning method for modifying few-layer MoS2 device geometries

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<mark>Journal publication date</mark>31/08/2017
<mark>Journal</mark>Proceedings of SPIE
Volume10354
Number of pages7
Pages (from-to)103540G
Publication statusPublished
Original languageEnglish

Abstract

When mechanically exfoliated two-dimensional (2D) materials are used for device applications, their properties strongly depend on the geometry and number of layers present in the flake. In general, these properties cannot be modified once a device has been fabricated out of an exfoliated flake. In this work we present a novel nano-patterning method for 2D material based devices, Pulsed eBeam Gas Assisted Patterning (PEBGAP), that allows us to fine tune their geometry once the device fabrication steps have been completed.

Bibliographic note

Fernando Jiménez Urbanos, Andrés Black, Ramón Bernardo-Gavito, Manuel R. Osorio, Santiago Casado, Daniel Granados, "Innovative patterning method for modifying few-layer MoS2 device geometries", Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540G (31 August 2017); doi: 10.1117/12.2272702; http://dx.doi.org/10.1117/12.2272702 Copyright 2017 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, or modification of the contents of the publication are prohibited.