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InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

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InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. / Carrington, P. J.; Solov'ev, V. A.; Zhuang, Q. et al.
In: Microelectronics Journal, Vol. 40, No. 3, 03.2009, p. 469-472.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Carrington, PJ, Solov'ev, VA, Zhuang, Q, Vanov, SV & Krier, A 2009, 'InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications', Microelectronics Journal, vol. 40, no. 3, pp. 469-472. https://doi.org/10.1016/j.mejo.2008.06.058

APA

Carrington, P. J., Solov'ev, V. A., Zhuang, Q., Vanov, S. V., & Krier, A. (2009). InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. Microelectronics Journal, 40(3), 469-472. https://doi.org/10.1016/j.mejo.2008.06.058

Vancouver

Carrington PJ, Solov'ev VA, Zhuang Q, Vanov SV, Krier A. InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. Microelectronics Journal. 2009 Mar;40(3):469-472. doi: 10.1016/j.mejo.2008.06.058

Author

Carrington, P. J. ; Solov'ev, V. A. ; Zhuang, Q. et al. / InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. In: Microelectronics Journal. 2009 ; Vol. 40, No. 3. pp. 469-472.

Bibtex

@article{86f72e7f754845d7a762273d2aba99ec,
title = "InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications",
abstract = "We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.",
keywords = "Mid-infrared, InSb quantum dots , Light emitting diodes , Molecular beam epitaxy",
author = "Carrington, {P. J.} and Solov'ev, {V. A.} and Q. Zhuang and Vanov, {S. V.} and A. Krier",
year = "2009",
month = mar,
doi = "10.1016/j.mejo.2008.06.058",
language = "English",
volume = "40",
pages = "469--472",
journal = "Microelectronics Journal",
issn = "0026-2692",
publisher = "Elsevier Limited",
number = "3",

}

RIS

TY - JOUR

T1 - InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

AU - Carrington, P. J.

AU - Solov'ev, V. A.

AU - Zhuang, Q.

AU - Vanov, S. V.

AU - Krier, A.

PY - 2009/3

Y1 - 2009/3

N2 - We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.

AB - We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.

KW - Mid-infrared

KW - InSb quantum dots

KW - Light emitting diodes

KW - Molecular beam epitaxy

U2 - 10.1016/j.mejo.2008.06.058

DO - 10.1016/j.mejo.2008.06.058

M3 - Journal article

VL - 40

SP - 469

EP - 472

JO - Microelectronics Journal

JF - Microelectronics Journal

SN - 0026-2692

IS - 3

ER -