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InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

Research output: Contribution in Book/Report/ProceedingsConference contribution

Published

Publication date2008
Host publicationNARROW GAP SEMICONDUCTORS 2007
EditorsBN Murdin, S Clowes
Place of publicationDORDRECHT
PublisherSpringer
Pages129-131
Number of pages3
ISBN (Print)978-1-4020-8424-9
Original languageEnglish

Conference

Conference13th International Conference on Narrow Gap Semiconductors
CityGuildford
Period8/07/0712/07/07

Conference

Conference13th International Conference on Narrow Gap Semiconductors
CityGuildford
Period8/07/0712/07/07

Abstract

We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.