Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Publication date | 2008 |
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Host publication | NARROW GAP SEMICONDUCTORS 2007 |
Editors | BN Murdin, S Clowes |
Place of Publication | DORDRECHT |
Publisher | Springer |
Pages | 129-131 |
Number of pages | 3 |
ISBN (print) | 978-1-4020-8424-9 |
<mark>Original language</mark> | English |
Event | 13th International Conference on Narrow Gap Semiconductors - Guildford Duration: 8/07/2007 → 12/07/2007 |
Conference | 13th International Conference on Narrow Gap Semiconductors |
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City | Guildford |
Period | 8/07/07 → 12/07/07 |
Conference | 13th International Conference on Narrow Gap Semiconductors |
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City | Guildford |
Period | 8/07/07 → 12/07/07 |
We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.