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Interface luminescence and lasing at a type II single broken-gap heterojunction

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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Interface luminescence and lasing at a type II single broken-gap heterojunction. / Moiseev, K D ; Mikhailova, M P ; Yakovlev, Y P et al.
10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. ed. / ZI Alferov; L Esaki. Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING, 2003. p. 340-342.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Moiseev, KD, Mikhailova, MP, Yakovlev, YP & Krier, A 2003, Interface luminescence and lasing at a type II single broken-gap heterojunction. in ZI Alferov & L Esaki (eds), 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. SPIE-INT SOC OPTICAL ENGINEERING, Bellingham, Wash., pp. 340-342, 10th International Symposium on Nanostructures, ST PETERSBURG, 17/06/02. https://doi.org/10.1117/12.514303

APA

Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P., & Krier, A. (2003). Interface luminescence and lasing at a type II single broken-gap heterojunction. In ZI. Alferov, & L. Esaki (Eds.), 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY (pp. 340-342). SPIE-INT SOC OPTICAL ENGINEERING. https://doi.org/10.1117/12.514303

Vancouver

Moiseev KD, Mikhailova MP, Yakovlev YP, Krier A. Interface luminescence and lasing at a type II single broken-gap heterojunction. In Alferov ZI, Esaki L, editors, 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING. 2003. p. 340-342 doi: 10.1117/12.514303

Author

Moiseev, K D ; Mikhailova, M P ; Yakovlev, Y P et al. / Interface luminescence and lasing at a type II single broken-gap heterojunction. 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY. editor / ZI Alferov ; L Esaki. Bellingham, Wash. : SPIE-INT SOC OPTICAL ENGINEERING, 2003. pp. 340-342

Bibtex

@inproceedings{c335842bd000431488afd1ba9c18f885,
title = "Interface luminescence and lasing at a type II single broken-gap heterojunction",
author = "Moiseev, {K D} and Mikhailova, {M P} and Yakovlev, {Y P} and A Krier",
year = "2003",
doi = "10.1117/12.514303",
language = "English",
isbn = "0-8194-4824-9",
pages = "340--342",
editor = "ZI Alferov and L Esaki",
booktitle = "10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY",
publisher = "SPIE-INT SOC OPTICAL ENGINEERING",
note = "10th International Symposium on Nanostructures ; Conference date: 17-06-2002 Through 21-06-2002",

}

RIS

TY - GEN

T1 - Interface luminescence and lasing at a type II single broken-gap heterojunction

AU - Moiseev, K D

AU - Mikhailova, M P

AU - Yakovlev, Y P

AU - Krier, A

PY - 2003

Y1 - 2003

U2 - 10.1117/12.514303

DO - 10.1117/12.514303

M3 - Conference contribution/Paper

SN - 0-8194-4824-9

SP - 340

EP - 342

BT - 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY

A2 - Alferov, ZI

A2 - Esaki, L

PB - SPIE-INT SOC OPTICAL ENGINEERING

CY - Bellingham, Wash.

T2 - 10th International Symposium on Nanostructures

Y2 - 17 June 2002 through 21 June 2002

ER -