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Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .

Research output: Contribution to journalJournal article


Journal publication date15/10/2001
JournalJournal of Applied Physics
Number of pages5
Original languageEnglish


Mid-infrared photoluminescence has been observed from interface transitions in high quality, abrupt P-Ga0.84In0.16As0.22Sb0.78/p-InAs heterojunctions grown by liquid phase epitaxy from an In-rich melt. The Ga0.84In0.16As0.22Sb0.78 quaternary epitaxial layer was unintentionally doped and grown lattice matched on to a (100) oriented p-type InAs substrate, resulting in a P-p isotype heterojunction. The photoluminescence emission spectra were investigated and exhibited three pronounced emission bands in the spectral region from 0.30 to 0.68 eV; h nu (1) = 0.317 eV, h nu (2) = 0.380 eV, and h nu (L) = 0.622 eV. The emission band h nu (1) was identified with radiative transitions between electron and hole quantum well subbands in the semimetal channel at the P-GaIn0.03As0.10Sb/p-InAs interface, while the h nu (2) band originates from radiative transitions involving deep acceptor states in the InAs substrate. The high-energy recombination h nu (L) is characteristic of the Ga0.84In0.16As0.22Sb0.78 bulk quaternary layer. (C) 2001 American Institute of Physics.

Bibliographic note

Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 90 (8), 2001 and may be found at http://link.aip.org/link/?JAPIAU/90/3988/1