Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Interface properties of Pb/InAs planar structures for Andreev spectroscopy
AU - Magnus, F.
AU - Yates, K. A.
AU - Clowes, S. K.
AU - Miyoshi, Y.
AU - Bugoslavsky, Y.
AU - Cohen, L. F.
AU - Aziz, A.
AU - Burnell, G.
AU - Blamire, M. G.
AU - Josephs-Franks, P. W.
PY - 2008/1/7
Y1 - 2008/1/7
N2 - For Andreev spectroscopy to be a useful tool to detect spin accumulation in semiconductors, we show by simulation that there is a maximum value for the interface scattering parameter that can be tolerated. Three different fabrication routes for Pb/InAs planar junctions are explored and we find that the "etch-back" processing strategy is the most promising. Using the parameters extracted from the spectroscopic analysis, we find that the interface properties fall into four different regimes of behavior. (C) 2008 American Institute of Physics.
AB - For Andreev spectroscopy to be a useful tool to detect spin accumulation in semiconductors, we show by simulation that there is a maximum value for the interface scattering parameter that can be tolerated. Three different fabrication routes for Pb/InAs planar junctions are explored and we find that the "etch-back" processing strategy is the most promising. Using the parameters extracted from the spectroscopic analysis, we find that the interface properties fall into four different regimes of behavior. (C) 2008 American Institute of Physics.
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U2 - 10.1063/1.2828979
DO - 10.1063/1.2828979
M3 - Journal article
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
M1 - 012501
ER -