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Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.

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Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction. / Moiseev, K. D.; Krier, A.; Mikhailova, M. P. et al.
In: Journal of Physics D: Applied Physics, Vol. 35, No. 7, 07.04.2002, p. 631-636.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Moiseev, KD, Krier, A, Mikhailova, MP & Yakovlev, YP 2002, 'Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.', Journal of Physics D: Applied Physics, vol. 35, no. 7, pp. 631-636. https://doi.org/10.1088/0022-3727/35/7/311

APA

Vancouver

Moiseev KD, Krier A, Mikhailova MP, Yakovlev YP. Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction. Journal of Physics D: Applied Physics. 2002 Apr 7;35(7):631-636. doi: 10.1088/0022-3727/35/7/311

Author

Moiseev, K. D. ; Krier, A. ; Mikhailova, M. P. et al. / Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction. In: Journal of Physics D: Applied Physics. 2002 ; Vol. 35, No. 7. pp. 631-636.

Bibtex

@article{205e5663bb0c440e9c09d80bff9b0f04,
title = "Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.",
abstract = "Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hnu(A) which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hnu(B) originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary.",
author = "Moiseev, {K. D.} and A. Krier and Mikhailova, {M. P.} and Yakovlev, {Y. P.}",
year = "2002",
month = apr,
day = "7",
doi = "10.1088/0022-3727/35/7/311",
language = "English",
volume = "35",
pages = "631--636",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "7",

}

RIS

TY - JOUR

T1 - Interface-induced electroluminescence in the type IIP-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunction.

AU - Moiseev, K. D.

AU - Krier, A.

AU - Mikhailova, M. P.

AU - Yakovlev, Y. P.

PY - 2002/4/7

Y1 - 2002/4/7

N2 - Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hnu(A) which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hnu(B) originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary.

AB - Intense electroluminescence in the range 77-300 K has been observed from interface transitions in type II P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 single heterojunctions grown by liquid phase epitaxy from an In-rich melt. The quaternary epitaxial layers forming the P-n heterojunction were unintentionally doped and grown lattice-matched onto a (100)-oriented n-type InAs substrate. The electroluminescence and photoluminescence emission spectra from the heterostructure were investigated in detail and are discussed below. The luminescence spectra contained two interface-induced emission bands: hnu(A) which was identified with radiative transitions between electron and hole quantum well sub-bands across the P-Ga0.84In0.16As0.22Sb0.78/n-In0.83Ga0.17As0.82Sb0.18 heterointerface, while the emission band hnu(B) originates from radiative transitions involving acceptor states in the narrow gap In0.83Ga0.17As0.82Sb0.18 near the type II heteroboundary.

U2 - 10.1088/0022-3727/35/7/311

DO - 10.1088/0022-3727/35/7/311

M3 - Journal article

VL - 35

SP - 631

EP - 636

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 7

ER -