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  • PhysRevB.47.13585

    Rights statement: © 1993 The American Physical Society

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Intersubband relaxation of two-dimensional electrons in heterostructures

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Intersubband relaxation of two-dimensional electrons in heterostructures. / Falko, Vladimir.
In: Physical review B, Vol. 47, No. 20, 15.05.1993, p. 13585-13589.

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Falko V. Intersubband relaxation of two-dimensional electrons in heterostructures. Physical review B. 1993 May 15;47(20):13585-13589. doi: 10.1103/PhysRevB.47.13585

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Falko, Vladimir. / Intersubband relaxation of two-dimensional electrons in heterostructures. In: Physical review B. 1993 ; Vol. 47, No. 20. pp. 13585-13589.

Bibtex

@article{6d63c7979f4445d695de57e30c1160f1,
title = "Intersubband relaxation of two-dimensional electrons in heterostructures",
abstract = "We calculate the lifetime of a nonequilibrium electron in the first excited subband in the low-density heterostructure where this photocreated carrier occurs at the last stage of its cooling. The electron interaction with acoustic phonons gives the dominant intersubband relaxation mechanism, if the intersubband energy splitting and the Fermi energy splitting are relatively small, 1 > epsilon(f)/DELTA10 > 0.7-0.8. In GaAs-AlxGa1-xAs heterostructures the intersubband relaxation determines the excited-electron lifetime to be of the order of tau(phon) approximately nanoseconds which depends slightly on the value of the two-dimensional electron density. When the ratio epsilon(F)/DELTA10 is smaller, the intersubband relaxation is determined by the Auger-like electron-electron scattering whose rate can increase up to the value tau(Aug)-1 approximately 10(10) sec-1.",
author = "Vladimir Falko",
note = "{\textcopyright} 1993 The American Physical Society",
year = "1993",
month = may,
day = "15",
doi = "10.1103/PhysRevB.47.13585",
language = "English",
volume = "47",
pages = "13585--13589",
journal = "Physical review B",
issn = "0163-1829",
publisher = "AMER PHYSICAL SOC",
number = "20",

}

RIS

TY - JOUR

T1 - Intersubband relaxation of two-dimensional electrons in heterostructures

AU - Falko, Vladimir

N1 - © 1993 The American Physical Society

PY - 1993/5/15

Y1 - 1993/5/15

N2 - We calculate the lifetime of a nonequilibrium electron in the first excited subband in the low-density heterostructure where this photocreated carrier occurs at the last stage of its cooling. The electron interaction with acoustic phonons gives the dominant intersubband relaxation mechanism, if the intersubband energy splitting and the Fermi energy splitting are relatively small, 1 > epsilon(f)/DELTA10 > 0.7-0.8. In GaAs-AlxGa1-xAs heterostructures the intersubband relaxation determines the excited-electron lifetime to be of the order of tau(phon) approximately nanoseconds which depends slightly on the value of the two-dimensional electron density. When the ratio epsilon(F)/DELTA10 is smaller, the intersubband relaxation is determined by the Auger-like electron-electron scattering whose rate can increase up to the value tau(Aug)-1 approximately 10(10) sec-1.

AB - We calculate the lifetime of a nonequilibrium electron in the first excited subband in the low-density heterostructure where this photocreated carrier occurs at the last stage of its cooling. The electron interaction with acoustic phonons gives the dominant intersubband relaxation mechanism, if the intersubband energy splitting and the Fermi energy splitting are relatively small, 1 > epsilon(f)/DELTA10 > 0.7-0.8. In GaAs-AlxGa1-xAs heterostructures the intersubband relaxation determines the excited-electron lifetime to be of the order of tau(phon) approximately nanoseconds which depends slightly on the value of the two-dimensional electron density. When the ratio epsilon(F)/DELTA10 is smaller, the intersubband relaxation is determined by the Auger-like electron-electron scattering whose rate can increase up to the value tau(Aug)-1 approximately 10(10) sec-1.

U2 - 10.1103/PhysRevB.47.13585

DO - 10.1103/PhysRevB.47.13585

M3 - Journal article

VL - 47

SP - 13585

EP - 13589

JO - Physical review B

JF - Physical review B

SN - 0163-1829

IS - 20

ER -