Home > Research > Publications & Outputs > Intraband absorption in the 8–12 μm band from S...

Research

Links

Text available via DOI:

View graph of relations

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice. / Zhuang, Qiandong; Li, J. M.; Li, H. X. et al.
In: Applied Physics Letters, Vol. 73, No. 25, 1998, p. 3706-3708.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhuang, Q, Li, JM, Li, HX, Zeng, YP, Pan, L, Chen, YH, Kong, MY & Lin, LY 1998, 'Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice', Applied Physics Letters, vol. 73, no. 25, pp. 3706-3708. https://doi.org/10.1063/1.122870

APA

Zhuang, Q., Li, J. M., Li, H. X., Zeng, Y. P., Pan, L., Chen, Y. H., Kong, M. Y., & Lin, L. Y. (1998). Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice. Applied Physics Letters, 73(25), 3706-3708. https://doi.org/10.1063/1.122870

Vancouver

Zhuang Q, Li JM, Li HX, Zeng YP, Pan L, Chen YH et al. Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice. Applied Physics Letters. 1998;73(25):3706-3708. doi: 10.1063/1.122870

Author

Zhuang, Qiandong ; Li, J. M. ; Li, H. X. et al. / Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice. In: Applied Physics Letters. 1998 ; Vol. 73, No. 25. pp. 3706-3708.

Bibtex

@article{488eb963652847818a6c077a713653f4,
title = "Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice",
abstract = "Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice ",
author = "Qiandong Zhuang and Li, {J. M.} and Li, {H. X.} and Zeng, {Y. P.} and L. Pan and Chen, {Y. H.} and M.Y. Kong and Lin, {L. Y.}",
year = "1998",
doi = "10.1063/1.122870",
language = "English",
volume = "73",
pages = "3706--3708",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "25",

}

RIS

TY - JOUR

T1 - Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

AU - Zhuang, Qiandong

AU - Li, J. M.

AU - Li, H. X.

AU - Zeng, Y. P.

AU - Pan, L.

AU - Chen, Y. H.

AU - Kong, M.Y.

AU - Lin, L. Y.

PY - 1998

Y1 - 1998

N2 - Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

AB - Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

U2 - 10.1063/1.122870

DO - 10.1063/1.122870

M3 - Journal article

VL - 73

SP - 3706

EP - 3708

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 25

ER -