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Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .

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Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. . / Krier, A.; Gao, H. H.; Sherstnev, V. V.
In: IEE Proceedings - Optoelectronics, Vol. 147, No. 3, 06.2000, p. 217-221.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Krier, A, Gao, HH & Sherstnev, VV 2000, 'Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .', IEE Proceedings - Optoelectronics, vol. 147, no. 3, pp. 217-221. https://doi.org/10.1049/ip-opt:20000503

APA

Krier, A., Gao, H. H., & Sherstnev, V. V. (2000). Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. . IEE Proceedings - Optoelectronics, 147(3), 217-221. https://doi.org/10.1049/ip-opt:20000503

Vancouver

Krier A, Gao HH, Sherstnev VV. Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. . IEE Proceedings - Optoelectronics. 2000 Jun;147(3):217-221. doi: 10.1049/ip-opt:20000503

Author

Krier, A. ; Gao, H. H. ; Sherstnev, V. V. / Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. . In: IEE Proceedings - Optoelectronics. 2000 ; Vol. 147, No. 3. pp. 217-221.

Bibtex

@article{e7a79929ddcf4952be112f9a86627ffd,
title = "Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .",
abstract = "The use of a rare earth gettering technique for the growth of very pure InAs(Sb) epitaxial lavers of high quantum efficiency and its application for the fabrication of powerful 4.6 mu m LEds operating at room temperature is reported. By introducing the rare earth element Gd or Yb into the liquid phase during LPE growth, it is found that the carrier concentration of InAs(Sb) layers can be effectively reduced to similar to 6 x 10(15) cm(-3), and that the photoluminescence (PL) intensity of such layers can be considerably increased by between 10 and 100 times compared with untreated material. This behaviour is attributed to the gettering of residual impurities and the corresponding reduction of non-radiative recombination centres in the presence of the rare earth. This technique is used to purify the InAs0.89Sb0.11 ternary material in the active region of an InAs0.55Sb0.15 P-0.30/InAs0.89Sb0.11/InAs0.55Sb0.15P0.30 symmetrical double hetero structure LED. A pulsed optical output power in excess of 1 mW at room temperature is measured, making these emitters suitable for use in portable instruments for the environmental monitoring of carbon monoxide at 4.6 mu m.",
author = "A. Krier and Gao, {H. H.} and Sherstnev, {V. V.}",
year = "2000",
month = jun,
doi = "10.1049/ip-opt:20000503",
language = "English",
volume = "147",
pages = "217--221",
journal = "IEE Proceedings - Optoelectronics",
issn = "1350-2433",
publisher = "Institute of Electrical Engineers",
number = "3",

}

RIS

TY - JOUR

T1 - Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs. .

AU - Krier, A.

AU - Gao, H. H.

AU - Sherstnev, V. V.

PY - 2000/6

Y1 - 2000/6

N2 - The use of a rare earth gettering technique for the growth of very pure InAs(Sb) epitaxial lavers of high quantum efficiency and its application for the fabrication of powerful 4.6 mu m LEds operating at room temperature is reported. By introducing the rare earth element Gd or Yb into the liquid phase during LPE growth, it is found that the carrier concentration of InAs(Sb) layers can be effectively reduced to similar to 6 x 10(15) cm(-3), and that the photoluminescence (PL) intensity of such layers can be considerably increased by between 10 and 100 times compared with untreated material. This behaviour is attributed to the gettering of residual impurities and the corresponding reduction of non-radiative recombination centres in the presence of the rare earth. This technique is used to purify the InAs0.89Sb0.11 ternary material in the active region of an InAs0.55Sb0.15 P-0.30/InAs0.89Sb0.11/InAs0.55Sb0.15P0.30 symmetrical double hetero structure LED. A pulsed optical output power in excess of 1 mW at room temperature is measured, making these emitters suitable for use in portable instruments for the environmental monitoring of carbon monoxide at 4.6 mu m.

AB - The use of a rare earth gettering technique for the growth of very pure InAs(Sb) epitaxial lavers of high quantum efficiency and its application for the fabrication of powerful 4.6 mu m LEds operating at room temperature is reported. By introducing the rare earth element Gd or Yb into the liquid phase during LPE growth, it is found that the carrier concentration of InAs(Sb) layers can be effectively reduced to similar to 6 x 10(15) cm(-3), and that the photoluminescence (PL) intensity of such layers can be considerably increased by between 10 and 100 times compared with untreated material. This behaviour is attributed to the gettering of residual impurities and the corresponding reduction of non-radiative recombination centres in the presence of the rare earth. This technique is used to purify the InAs0.89Sb0.11 ternary material in the active region of an InAs0.55Sb0.15 P-0.30/InAs0.89Sb0.11/InAs0.55Sb0.15P0.30 symmetrical double hetero structure LED. A pulsed optical output power in excess of 1 mW at room temperature is measured, making these emitters suitable for use in portable instruments for the environmental monitoring of carbon monoxide at 4.6 mu m.

U2 - 10.1049/ip-opt:20000503

DO - 10.1049/ip-opt:20000503

M3 - Journal article

VL - 147

SP - 217

EP - 221

JO - IEE Proceedings - Optoelectronics

JF - IEE Proceedings - Optoelectronics

SN - 1350-2433

IS - 3

ER -