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Investigation on InGaAs/InAlAs quantum cascade lasers.

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<mark>Journal publication date</mark>2001
<mark>Journal</mark>Journal of Infrared and Millimeter Waves
Issue number1
Volume20
Number of pages3
Pages (from-to)41-43
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The device has a reinforced ridge waveguide structure. The threshold current obtained at 80K is about 0.5A, an d the corresponding threshold current density is about 5kA/cm2.