Home > Research > Publications & Outputs > Light sources for wavelengths > 2 mu m grown by...

Research

Links

Text available via DOI:

View graph of relations

Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer. / Krier, A ; Chubb, D ; Krier, S E et al.
In: IEE Proceedings - Optoelectronics, Vol. 145, No. 5, 10.1998, p. 292-296.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A, Chubb, D, Krier, SE, Hopkinson, M & Hill, G 1998, 'Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer', IEE Proceedings - Optoelectronics, vol. 145, no. 5, pp. 292-296. https://doi.org/10.1049/ip-opt:19982308

APA

Krier, A., Chubb, D., Krier, S. E., Hopkinson, M., & Hill, G. (1998). Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer. IEE Proceedings - Optoelectronics, 145(5), 292-296. https://doi.org/10.1049/ip-opt:19982308

Vancouver

Krier A, Chubb D, Krier SE, Hopkinson M, Hill G. Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer. IEE Proceedings - Optoelectronics. 1998 Oct;145(5):292-296. doi: 10.1049/ip-opt:19982308

Author

Krier, A ; Chubb, D ; Krier, S E et al. / Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer. In: IEE Proceedings - Optoelectronics. 1998 ; Vol. 145, No. 5. pp. 292-296.

Bibtex

@article{d268b37ba31940879240509432cbfdac,
title = "Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer",
abstract = "Light emitting diodes (LEDs) and lasers operating in the 2 to 3 mu m spectral region at room temperature are been demonstrated. The devices were fabricated from InxGa1-xAs/InAsyP1-y double heterostructures grown on n-type InP (100) substrates by molecular beam epitaxy. A strain relaxed buffer layer which incorporates composition reversals was used to reduce the threading dislocation density and to accommodate the large lattice mismatch (up to 2.7%) between the InP substrate and the device active region. Efficient electroluminescence emission at wavelengths between 2 and 3 mu m was obtained from the LEDs at room temperature, while diode lasers exhibited coherent emission in the range 2-2.6 mu m at temperatures up to 130 K. For one of the LEDs a characteristic absorption was readily observed at 2.7 mu m in the diode electroluminescence emission spectrum, corresponding to strong water vapour absorption in the atmosphere. These devices could easily form the key component of an infrared gas sensor for water vapour detection and monitoring at 2.7 mu m in a variety of different applications.",
author = "A Krier and D Chubb and Krier, {S E} and M Hopkinson and G Hill",
year = "1998",
month = oct,
doi = "10.1049/ip-opt:19982308",
language = "English",
volume = "145",
pages = "292--296",
journal = "IEE Proceedings - Optoelectronics",
issn = "1350-2433",
publisher = "Institute of Electrical Engineers",
number = "5",

}

RIS

TY - JOUR

T1 - Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer

AU - Krier, A

AU - Chubb, D

AU - Krier, S E

AU - Hopkinson, M

AU - Hill, G

PY - 1998/10

Y1 - 1998/10

N2 - Light emitting diodes (LEDs) and lasers operating in the 2 to 3 mu m spectral region at room temperature are been demonstrated. The devices were fabricated from InxGa1-xAs/InAsyP1-y double heterostructures grown on n-type InP (100) substrates by molecular beam epitaxy. A strain relaxed buffer layer which incorporates composition reversals was used to reduce the threading dislocation density and to accommodate the large lattice mismatch (up to 2.7%) between the InP substrate and the device active region. Efficient electroluminescence emission at wavelengths between 2 and 3 mu m was obtained from the LEDs at room temperature, while diode lasers exhibited coherent emission in the range 2-2.6 mu m at temperatures up to 130 K. For one of the LEDs a characteristic absorption was readily observed at 2.7 mu m in the diode electroluminescence emission spectrum, corresponding to strong water vapour absorption in the atmosphere. These devices could easily form the key component of an infrared gas sensor for water vapour detection and monitoring at 2.7 mu m in a variety of different applications.

AB - Light emitting diodes (LEDs) and lasers operating in the 2 to 3 mu m spectral region at room temperature are been demonstrated. The devices were fabricated from InxGa1-xAs/InAsyP1-y double heterostructures grown on n-type InP (100) substrates by molecular beam epitaxy. A strain relaxed buffer layer which incorporates composition reversals was used to reduce the threading dislocation density and to accommodate the large lattice mismatch (up to 2.7%) between the InP substrate and the device active region. Efficient electroluminescence emission at wavelengths between 2 and 3 mu m was obtained from the LEDs at room temperature, while diode lasers exhibited coherent emission in the range 2-2.6 mu m at temperatures up to 130 K. For one of the LEDs a characteristic absorption was readily observed at 2.7 mu m in the diode electroluminescence emission spectrum, corresponding to strong water vapour absorption in the atmosphere. These devices could easily form the key component of an infrared gas sensor for water vapour detection and monitoring at 2.7 mu m in a variety of different applications.

U2 - 10.1049/ip-opt:19982308

DO - 10.1049/ip-opt:19982308

M3 - Journal article

VL - 145

SP - 292

EP - 296

JO - IEE Proceedings - Optoelectronics

JF - IEE Proceedings - Optoelectronics

SN - 1350-2433

IS - 5

ER -