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Liquid phase epitaxial growth and morphology of InSb quantum dots. .

Research output: Contribution to journalJournal article

Published

Journal publication date21/03/2001
JournalJournal of Physics D: Applied Physics
Journal number6
Volume34
Number of pages5
Pages874-878
Original languageEnglish

Abstract

In this paper we report on the morphology of InSb quantum dots (QDs) grown by liquid phase epitaxy on InAs and GaAs substrates. Small and large QDs are observed on both these two substrates, the resulting structures being generally similar to those produced by MBE and MOVPE. The density of the small QDs is approximately 10(10) cm(-2), with dimensions of 5-15 nm in height and 0.1-0.3 aspect ratio. The density, size and shape of the small QDs were found to change with growth temperature, supercooling and melt-substrate contact time. The large QDs appear to be at a much lower density, being approximately 2 x 10(7) and 1 x 10(9) cm(-2) for growth on GaAs and InAs substrates, respectively. Furthermore, it was found that the difference in QD diameters becomes smaller as the lattice mismatch decreases.