TY - JOUR

T1 - Liquid phase epitaxial growth and morphology of InSb quantum dots. .

AU - Krier, A.

AU - Huang, X. L.

AU - Hammiche, A.

PY - 2001/3/21

Y1 - 2001/3/21

N2 - In this paper we report on the morphology of InSb quantum dots (QDs) grown by liquid phase epitaxy on InAs and GaAs substrates. Small and large QDs are observed on both these two substrates, the resulting structures being generally similar to those produced by MBE and MOVPE. The density of the small QDs is approximately 10(10) cm(-2), with dimensions of 5-15 nm in height and 0.1-0.3 aspect ratio. The density, size and shape of the small QDs were found to change with growth temperature, supercooling and melt-substrate contact time. The large QDs appear to be at a much lower density, being approximately 2 x 10(7) and 1 x 10(9) cm(-2) for growth on GaAs and InAs substrates, respectively. Furthermore, it was found that the difference in QD diameters becomes smaller as the lattice mismatch decreases.

AB - In this paper we report on the morphology of InSb quantum dots (QDs) grown by liquid phase epitaxy on InAs and GaAs substrates. Small and large QDs are observed on both these two substrates, the resulting structures being generally similar to those produced by MBE and MOVPE. The density of the small QDs is approximately 10(10) cm(-2), with dimensions of 5-15 nm in height and 0.1-0.3 aspect ratio. The density, size and shape of the small QDs were found to change with growth temperature, supercooling and melt-substrate contact time. The large QDs appear to be at a much lower density, being approximately 2 x 10(7) and 1 x 10(9) cm(-2) for growth on GaAs and InAs substrates, respectively. Furthermore, it was found that the difference in QD diameters becomes smaller as the lattice mismatch decreases.

U2 - 10.1088/0022-3727/34/6/307

DO - 10.1088/0022-3727/34/6/307

M3 - Journal article

VL - 34

SP - 874

EP - 878

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 6

ER -