Rights statement: This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 191, 2019 DOI: 10.1016/j.solmat.2018.11.036
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Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
AU - Lu, Qi
AU - Montesdeoca Cardenes, Denise
AU - Carrington, Peter James
AU - Marshall, Andrew Robert Julian
AU - Krier, Anthony
AU - Beanland, Richard
N1 - This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 191, 2019 DOI: 10.1016/j.solmat.2018.11.036
PY - 2019/3/1
Y1 - 2019/3/1
N2 - Thermophotovoltaic (TPV) devices based on GaInAsSb lattice matched to GaSb (100) substrates have demonstrated high external quantum efficiencies (EQEs) in the mid-infrared spectral range, making them promising candidates for waste heat recovery from high temperature “blackbody” sources. In this work, the GaInAsSb alloy has been integrated onto more cost-effective GaAs (100) substrates by using advanced metamorphic buffer layer techniques in molecular beam epitaxy (MBE), which included an interfacial misfit (IMF) array at the GaSb/GaAs interface followed by GaInSb/GaSb dislocation filtering layers. The threading dislocations in the GaInAsSb region can be efficiently supressed, resulting in high quality materials for TPV applications. To determine the performance of the GaInAsSb TPV on GaAs it was compared with a cell grown lattice matched onto GaSb substrate having the same structure. The resulting TPV on GaAs exhibited similar dark current-voltage characteristics with that on GaSb. Under illumination from an 800 °C silicon nitride emitter, the short circuit current density (Jsc) from the GaInAsSb TPVs on GaAs reached more than 90% of the control cell on GaSb, and the open circuit voltage (Voc) exceeded 80% of the cell on GaSb. The EQE from the TPV on GaAs reached around 62%, the highest value reported from this type of TPV on GaAs. With improved TPV structure design, large area GaInAsSb TPV panels on GaAs substrates can be realized in the future for waste heat energy recovery applications.
AB - Thermophotovoltaic (TPV) devices based on GaInAsSb lattice matched to GaSb (100) substrates have demonstrated high external quantum efficiencies (EQEs) in the mid-infrared spectral range, making them promising candidates for waste heat recovery from high temperature “blackbody” sources. In this work, the GaInAsSb alloy has been integrated onto more cost-effective GaAs (100) substrates by using advanced metamorphic buffer layer techniques in molecular beam epitaxy (MBE), which included an interfacial misfit (IMF) array at the GaSb/GaAs interface followed by GaInSb/GaSb dislocation filtering layers. The threading dislocations in the GaInAsSb region can be efficiently supressed, resulting in high quality materials for TPV applications. To determine the performance of the GaInAsSb TPV on GaAs it was compared with a cell grown lattice matched onto GaSb substrate having the same structure. The resulting TPV on GaAs exhibited similar dark current-voltage characteristics with that on GaSb. Under illumination from an 800 °C silicon nitride emitter, the short circuit current density (Jsc) from the GaInAsSb TPVs on GaAs reached more than 90% of the control cell on GaSb, and the open circuit voltage (Voc) exceeded 80% of the cell on GaSb. The EQE from the TPV on GaAs reached around 62%, the highest value reported from this type of TPV on GaAs. With improved TPV structure design, large area GaInAsSb TPV panels on GaAs substrates can be realized in the future for waste heat energy recovery applications.
KW - Thermophotovoltaics
KW - GaInAsSb
KW - Dislocation filtering
KW - Interfacial misfit array
U2 - 10.1016/j.solmat.2018.11.036
DO - 10.1016/j.solmat.2018.11.036
M3 - Journal article
VL - 191
SP - 406
EP - 412
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -