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Low leakage-current InAsSb nanowire photodetectors on silicon

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Low leakage-current InAsSb nanowire photodetectors on silicon. / Thompson, Michael Dermot; Alhodaib, Aiyeshah; Craig, Adam P. et al.
In: Nano Letters, Vol. 16, No. 1, 13.01.2016, p. 182-187.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Thompson, MD, Alhodaib, A, Craig, AP, Robson, AJ, Aziz, A, Krier, A, Svensson, J, Wernersson, L, Sanchez, AM & Marshall, ARJ 2016, 'Low leakage-current InAsSb nanowire photodetectors on silicon', Nano Letters, vol. 16, no. 1, pp. 182-187. https://doi.org/10.1021/acs.nanolett.5b03449

APA

Thompson, M. D., Alhodaib, A., Craig, A. P., Robson, A. J., Aziz, A., Krier, A., Svensson, J., Wernersson, L., Sanchez, A. M., & Marshall, A. R. J. (2016). Low leakage-current InAsSb nanowire photodetectors on silicon. Nano Letters, 16(1), 182-187. https://doi.org/10.1021/acs.nanolett.5b03449

Vancouver

Thompson MD, Alhodaib A, Craig AP, Robson AJ, Aziz A, Krier A et al. Low leakage-current InAsSb nanowire photodetectors on silicon. Nano Letters. 2016 Jan 13;16(1):182-187. Epub 2015 Dec 16. doi: 10.1021/acs.nanolett.5b03449

Author

Thompson, Michael Dermot ; Alhodaib, Aiyeshah ; Craig, Adam P. et al. / Low leakage-current InAsSb nanowire photodetectors on silicon. In: Nano Letters. 2016 ; Vol. 16, No. 1. pp. 182-187.

Bibtex

@article{4e1c911dce2b489fa91d3ca3a33d2ebe,
title = "Low leakage-current InAsSb nanowire photodetectors on silicon",
abstract = "Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.",
author = "Thompson, {Michael Dermot} and Aiyeshah Alhodaib and Craig, {Adam P.} and Robson, {Alexander James} and Atif Aziz and Anthony Krier and Johannes Svensson and Lars-erik Wernersson and Sanchez, {Ana M.} and Marshall, {Andrew R. J.}",
year = "2016",
month = jan,
day = "13",
doi = "10.1021/acs.nanolett.5b03449",
language = "English",
volume = "16",
pages = "182--187",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "1",

}

RIS

TY - JOUR

T1 - Low leakage-current InAsSb nanowire photodetectors on silicon

AU - Thompson, Michael Dermot

AU - Alhodaib, Aiyeshah

AU - Craig, Adam P.

AU - Robson, Alexander James

AU - Aziz, Atif

AU - Krier, Anthony

AU - Svensson, Johannes

AU - Wernersson, Lars-erik

AU - Sanchez, Ana M.

AU - Marshall, Andrew R. J.

PY - 2016/1/13

Y1 - 2016/1/13

N2 - Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.

AB - Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.

UR - http://dx.doi.org/10.17635/lancaster/researchdata/51

U2 - 10.1021/acs.nanolett.5b03449

DO - 10.1021/acs.nanolett.5b03449

M3 - Journal article

VL - 16

SP - 182

EP - 187

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 1

ER -